WMSIC Electronic Components

DIODES BC847BLP-7B BC847BLP

DIODES BC847BLP-7B BC847BLP
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Product image

ModelBC847BLP-7B
PackageDFN-3(1x0.6)
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

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Technical data

Product details

19 specifications

Core information

Product name
DIODES BC847BLP-7B
Type
DIODES
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
BC847BLP-7B
Electronic Component
1
Package
DFN-3(1x0.6)
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.009g
Electronic Component
1
Electronic Component
BM0258627099
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
10000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC847BLP-7B 产品概述

概述

BC847BLP-7B 是一种高性能的 NPN 型双极型晶体管（BJT），其设计目的是满足广泛的电子应用需求。作为 DIODES(美台) 旗下的产品，这款三极管在提供可靠的电性能、低功耗和优良的温度稳定性方面表现出色，尤其适合用于现代高频和低功耗电路。

主要参数

  • 工作温度范围: BC847BLP-7B 的工作温度範围在 -55°C 至 150°C 之间，这使得它能够在各种严苛环境中稳定工作，适合于航空航天、汽车电子以及工业控制等应用。

  • 直流电流增益 (hFE): 在 2mA 的基极电流和 5V 的电压下，其最小 DC 电流增益达到 200，展现了该器件在小信号放大方面的优秀性能。

  • 最大电流和电压: 集电极的最大电流（Ic）为 100mA，而集射极的击穿电压（Vceo）不超过 45V，适用于多种电源条件的应用设计。

  • 功率耗散: BC847BLP-7B 的最大功率耗散为 250mW，使其能有效处理大部分小信号与中等信号应用的功率需求。

  • 频率特性: 该晶体管的跃迁频率可达 100MHz，这一高频特性使其适合用于 RF 设计、信号放大以及高速开关电路。

  • 饱和压降: 在 5mA 的基极电流和 100mA 的集电极电流下，最大饱和压降为 600mV，确保了大信号应用中的高效率。

  • 集电极截止电流（ICBO）: 最大集电极截止电流仅为 15nA，表明了该器件在待机状态下的极低漏电流，有利于延长电池供电设备的使用寿命。

封装和应用

BC847BLP-7B 采用小型 DFN-3(1x0.6) 表面贴装封装，在空间受限的 PCB 设计中，这一特性极大地提高了布局的灵活性，适合于便携式设备和高密度集成电路的应用。

其广泛的应用场景包括：

  • 开关电路: BC847BLP-7B 可以作为低信号控制开关，广泛应用于电源开关和逻辑电路中。
  • 信号放大: 鉴于其高增益特性，该三极管适用于音频信号放大器、RF 放大器等。
  • 线性放大配置: 可用于设计线性放大器，实现精确的信号处理。
  • 振荡器和调制器: 其高频特性使其在振荡器和调制器件中表现良好，适合 RF 频段的应用。

典型应用电路

BC847BLP-7B 在典型的应用电路中，可以配置为共发射极、共集电极或共基极放大器，具体的电路设计可根据实际需求进行调整。在这些配置中，三极管的 hFE 和饱和压降参数为系统设计提供了关键的性能指标。

总结

BC847BLP-7B 是一种功能性强且具备高性能指标的 NPN 型 BJT，适合在各种电子设备和电路中应用。凭借其优良的电气特性、灵活的封装设计和广泛的工作温度范围，它无疑是电子工程师在设计中不可或缺的重要元器件之一。无论是在工业、通信、消费电子或汽车电子领域，BC847BLP-7B 都可以为产品的性能提供有力支持。

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