Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
DOWO PESD3V3V1BL-DW PESD3V3V1BL
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO PESD3V3V1BL-DW
- Type
- DOWO
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- PESD3V3V1BL-DW
- Electronic Component
- 1
- Package
- DFN1006-2L
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.009g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 10pF
- Electronic Component
- BM0258760038
- Operating Temperature
- 55℃~+125℃
- Voltage
- 5V；8.5V
- Electronic Component
- IEC 61000-4-5；IEC 61000-4-2
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PESD3V3V1BL-DW 产品概述
一、产品简介
PESD3V3V1BL-DW 是东沃（DOWO）推出的一款单路双向瞬态抑制二极管，专为 3.3V 工作电压的高速信号线和接口提供 ESD 与雷击浪涌保护。器件采用 DFN1006-2L 表面贴装封装，体积小、寄生电容低，适合移动设备、通信接口和工业控制等对体积与信号完整性有较高要求的应用场景。
二、主要电气参数
- 极性：双向
- 反向截止电压 Vrwm：3.3V
- 钳位电压（典型）：5V / 8.5V（视测试条件与冲击能量而定）
- 击穿电压：5.5V
- 峰值脉冲电流 Ipp：8.5A（8/20μs）
- 峰值脉冲功率 Ppp：72W（8/20μs）
- 反向电流 Ir：≤100nA
- 结电容 Cj：约10pF
- 通道数：单路
- 工作温度：-55℃ ~ +125℃
- 防护等级与标准：符合 IEC 61000-4-2（ESD）与 IEC 61000-4-5（浪涌）测试要求
三、产品特性与优势
- 双向保护：适用于差分或双向数据线，无需外接反向元件即可抑制正负极性瞬态。
- 低钳位与高吸收能力：在 8/20μs 浪涌测试下可承受高达 8.5A 的冲击电流并将能量限制在较安全电压区间（典型钳位 5V~8.5V），有效保护后端器件。
- 低漏电与小结电容：100nA 的极低静态漏电和 ~10pF 的结电容，使其对 3.3V 芯片与高速信号链影响最小，适合对输入偏置电流敏感及需要保持信号完整性的场合。
- 小型封装：DFN1006-2L 便于高密度 PCB 布局与自动贴装，利于消费者与通信终端产品的轻薄化设计。
四、典型应用场景
- 移动终端与便携设备的 I/O 口、按键线保护
- 串行接口（UART、I2C、SPI）与差分信号线的浪涌/ESD 防护
- USB、HDMI、音频与摄像头接口前端保护（需注意电平匹配）
- 工业控制与物联网模块的外部引脚保护
五、使用建议与布板要点
- 建议将器件靠近受保护的连接器或引脚放置，保护路径尽量短、直。
- 对于高速差分信号，注意匹配走线阻抗，避免器件引脚到线的过长过弯导致反射。
- 若需更高能量吸收或多通道保护，可并联或采用多路器件组合，但并联时需注意热均衡与钳位一致性。
- 关注器件在连续脉冲情况下的热耗散，必要时在 PCB 设计中增加散热铜箔。
六、可靠性与采购信息
PESD3V3V1BL-DW 满足常见的 IEC ESD 与浪涌标准，适用于工业级温度范围（-55℃~+125℃）。封装为 DFN1006-2L，支持表面贴装生产工艺。选型时请确认设备的最大钳位电压与被保护器件的耐受电压匹配，必要时与供应商确认器件在实际应用波形下的钳位特性与能量余量。
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