WMSIC Electronic Components

HGSEMI HG24C64CM5/TR HG24C64CM5

ModelHG24C64CM5/TR
PackageSOT-23-5
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI HG24C64CM5 / TR
Type
HGSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
HG24C64CM5/TR
Electronic Component
1
Package
SOT-23-5
Electronic Component
EEPROM
Electronic Component
0.079g
Electronic Component
1
Features
Built-in positions(POR)
Electronic Component
BM0230144336
Electronic Component
64Kbit
Operating Temperature
40℃~+105℃
Operating Voltage
1.7V~5.5V
Interface Type
I2C
Electronic Component
200
Clock Frequency(fc)
1MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

HG24C64CM5/TR 产品概述

一、产品简介

HG24C64CM5/TR 是华冠(HGSEMI)推出的一款串行 I2C EEPROM 存储器,容量为 64Kbit(8K 字节)。器件支持最高 1MHz 的 I2C 时钟频率,工作电压范围宽(1.7V–5.5V),并采用小型 SOT-23-5 封装,适合对体积、功耗和可靠性有较高要求的嵌入式系统与工业类应用。

二、主要特性

  • 接口类型:I2C(两线串行总线),兼容标准模式、快速模式乃至 Fast-Mode Plus(最高可达 1MHz)。
  • 存储容量:64Kbit(8K 字节),适合程序参数、配置数据、序列号及校准常数等存储需求。
  • 电源范围:1.7V 至 5.5V,支持从低电压锂电池到 5V 工业电源的多种系统。
  • 写周期时间(Tw):典型 3ms,支持随机写与页写(页大小请参考完整数据手册)。
  • 写周期寿命:高达 2,000,000 次(典型或保证值,适合频繁写入场景)。
  • 数据保留(TDR):200 年级别的长期数据保持能力。
  • 工作温度范围:-40℃ 至 +105℃,满足工业级和部分汽车电子环境要求。
  • 封装:SOT-23-5,便于空间受限的应用与自动化贴装。

三、关键规格要点

  • I2C 时钟:最高 1MHz(请在设计中确认主控器支持该速率)。
  • 低压启动:最低 1.7V,适合低功耗系统,但在低压下电平阈值与 I/O 特性需参考数据手册。
  • 写入行为:写操作完成期间器件内部忙(建议使用 ACK 轮询或等待 Tw 完成)。
  • 电气兼容性:SDA、SCL 需外接上拉电阻(阻值按总线容量与速率选型,一般 4.7k–10kΩ)。

四、封装与引脚说明

HG24C64CM5/TR 提供 SOT-23-5 小封装,节省 PCB 面积。典型 5 引脚器件包括 VCC、GND、SDA、SCL 及可选的写保护/扩展引脚。因不同制造及版本引脚定义可能存在差异,设计前请务必参考华冠正式数据手册以确认引脚排列及功能。

五、主要应用场景

  • 工业控制器与传感器模块:参数记录、配置存储与标定数据保存。
  • 可穿戴与低功耗设备:在低电压工作条件下保存用户设置与日志。
  • 通信与消费电子:固件配置、设备ID及序列号的非易失性存储。
  • 汽车电子(视具体认证与可靠性要求):工作温度与耐写次数满足多数车载级应用。

六、设计与使用建议

  • 电源去耦:在 VCC 与 GND 之间放置 0.1µF 陶瓷去耦电容,靠近器件引脚布局以抑制瞬态噪声。
  • I2C 上拉电阻:根据总线长度与主控器输入特性选择合适阻值;高速通讯时可选用较小阻值以保证上升时间。
  • 写入优化:尽量使用页写以提高写入效率并降低平均写入次数;写完成采用 ACK 轮询避免固定延时浪费。
  • 保护与容错:在多主机或多器件总线设计中注意地址冲突与总线争用;使用 WP(若有)或外部逻辑进行写保护管理。
  • 电压域接口:若主控与 EEPROM 电压域不同,需使用合理的电平移位方案,避免损坏器件或产生错误通信。

七、可靠性与长期数据保持

该器件具有高达 2,000,000 次写入寿命与约 200 年的数据保持能力,适合对数据完整性与长期保存有严格要求的应用。但实际寿命与保存期受工作温度、写入模式和环境影响,关键数据仍建议在系统设计中采取冗余或校验机制。

八、采购与技术资料

HG24C64CM5/TR 为华冠系列产品,SOT-23-5 小封装便于量产与 BGA/PCB 集成。购买与工程应用前请索取并阅读华冠官方数据手册和封装图纸,确认引脚定义、电气特性曲线与推荐 PCB 尺寸。若需更大容量或不同封装,可咨询供应商推荐替代型号。

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