Model & package intelligence
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HGSEMI AT24C512CM/TR AT24C512CM
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI AT24C512CM / TR
- Type
- HGSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- AT24C512CM/TR
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- EEPROM
- Electronic Component
- 0.255g
- Electronic Component
- 1
- Features
- Built-in positions(POR)
- Electronic Component
- BM0227365044
- Electronic Component
- 512Kbit
- Operating Temperature
- 40℃~+105℃
- Operating Voltage
- 1.7V~5.5V
- Interface Type
- I2C
- Electronic Component
- 200
- Clock Frequency(fc)
- 1MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AT24C512CM/TR 产品概述
一、产品简介
AT24C512CM/TR 是华冠（HGSEMI）推出的一款高可靠性串行 EEPROM 器件，存储容量为 512Kbit（64K 字节）。器件采用标准 I2C 总线接口，支持高达 1MHz 的时钟频率，工作电压范围宽（1.7V ～ 5.5V），并以 SOP-8 封装供货，适合各种嵌入式、工业级和消费类应用的非易失性数据存储需求。
二、主要电气与可靠性参数
- 存储容量：512Kbit（64K 字节）
- 接口类型：I2C，总线时钟频率上限 fc = 1MHz
- 工作电压：1.7V ～ 5.5V，兼容单节锂电池供电与多种逻辑电平
- 工作温度：-40°C ～ +105°C，满足工业级温度要求
- 数据保持：TDR = 200 年（典型数据保存期）
- 擦写寿命：写周期寿命可达 2,000,000 次（耐久性优良）
- 单次写周期时间：Tw = 3 ms（典型页面/字节写入完成时间）
- 封装：SOP-8（工业常用封装）；型号后缀 /TR 表示卷带供货
三、产品特性与使用注意
AT24C512CM/TR 以低功耗、宽电压和高可靠性为设计目标，适合在严格的温度和供电条件下长期保存关键数据。器件支持标准 I2C 读写操作，常见应用模式包括字节写、页面写以及顺序读取。由于每次写操作存在写入完成时间（Tw ≈ 3 ms），建议在软件设计中采用轮询应答或超时机制以确认写入完成，并尽量在页面边界内一次性写入以提高效率和延长设备寿命。
四、典型应用场景
- 工业控制与自动化设备：配置参数、校准数据和故障日志的持久保存
- 医疗与仪器仪表：长期记录校准系数和设备标识信息
- 消费电子与便携设备：固件配置、用户偏好与识别码保存
- 汽车电子（非安全关键路径）：车载模块的阈值数据与历史信息存储
五、封装与采购信息
器件采用 SOP-8 封装，便于传统 PCB 装配与自动化贴片工艺；后缀 /TR 表示卷带（Tape & Reel）包装，方便批量生产线使用。技术选型时可关注工作电压与总线速率匹配，以及在页面写入时避免跨页写入造成的性能下降。
总体而言，AT24C512CM/TR 以其宽电压、工业温度范围、高数据保持与超长擦写寿命的组合，适合对可靠性和长期数据保存有较高要求的应用场景。若需进一步获取时序图、引脚定义或典型应用电路，请提供具体需求，以便提供更详细资料。
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