WMSIC Electronic Components

HGSEMI 74HC595LQ/TR 74HC595LQ

Model74HC595LQ/TR
PackageQFN-16-EP(3x3)
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI 74HC595LQ / TR
Type
HGSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
to
Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
74HC595LQ/TR
Electronic Component
1
Package
QFN-16-EP(3x3)
Electronic Component
positions Register
Electronic Component
74HC
Electronic Component
0.137g
Electronic Component
1
Features
Output
Electronic Component
BM0264548217
Operating Temperature
40℃~+85℃
Operating Voltage
3.2V~6V
Output Type
Electronic Component
Clock Frequency(fc)
10MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

74HC595LQ/TR 产品概述

一、概述

74HC595LQ/TR(HGSEMI / 华冠)是一款高性能的 8 位 CMOS 串行输入并行输出移位寄存器,集成了储存寄存器与三态并行输出,适合用于微控制器 I/O 扩展、LED 驱动和总线共享场合。器件采用 74HC 系列工艺,工作稳定,功耗低,适用于工业级温度范围。

二、主要参数

  • 功能:串行至并行(8 位移位寄存器 + 储存(并行输出)寄存器)
  • 工作电压:3.2 V ~ 6.0 V
  • 最大串行时钟频率(建议):10 MHz(实际速率受负载和时序约束影响)
  • 每元件位数:8 位
  • 输出类型:三态(便于总线共享)
  • 系列:74HC
  • 工作温度:-40 ℃ ~ +85 ℃
  • 耗散功率(Pd):500 mW
  • 传播延迟(tpd):100 ns @ 5 V、CL = 50 pF
  • 主要功能特性:异步清零(MR,active low);输出使能(OE,三态控制)

三、功能特性

  • 串行数据输入,内部移位寄存器接收数据,使用移位时钟(SH_CP)移入,使用存储时钟(ST_CP)将数据并行锁存到输出寄存器。
  • 三态并行输出(Q0–Q7),当 OE 有效(通常为高)时,输出进入高阻态,便于多个器件并联在同一总线上。
  • 异步清零(MR)可立即将移位寄存器或输出寄存器清零,适用于复位或初始化。
  • 提供级联输出(通常为 Q7'),便于多个 74HC595 串联扩展位数。

四、封装与热性能

  • 封装:QFN-16-EP(3 × 3 mm),带底部散热焊盘(Exposed Pad),有利于热量传导与焊接可靠性。
  • 导热与功耗:最大耗散功率 500 mW,在高温或密集切换条件下需注意散热与 PCB 铜箔散热设计。

五、典型应用

  • MCU GPIO 扩展(按键矩阵、控制面板)
  • LED 灯条/指示灯驱动(可与限流电阻或恒流驱动结合)
  • 低速并行数据输出(数码管驱动、寄存器扩展)
  • 需要总线复用或多个设备共享导线的系统

六、使用建议与注意事项

  • 电源去耦:在 VCC 与 GND 之间放置 0.1 μF 陶瓷去耦电容,靠近封装引脚焊盘布置,以降低瞬态噪声。
  • 时钟与延迟:器件在 5 V、CL = 50 pF 条件下 tpd ≈100 ns,建议工作频率根据实际负载与 PCB 布线留有裕量,10 MHz 为典型参考值,上限取决于系统时序。
  • 三态控制:在多器件并联输出时,确保只有一个器件在任一时刻驱动总线,避免总线冲突。
  • 异步清零:MR 为异步清零,使用时注意对其他时序信号的影响,避免在敏感时刻误触发。
  • 静电防护:74HC 系列为 CMOS 器件,推荐在生产与调试过程中采取防静电措施(接地腕带、防静电垫)。
  • 焊接与封装:QFN-EP 需注意露盘焊锡和回流曲线,按供应商建议的焊盘设计与回流工艺进行 PCB 制作。

七、订购与封装信息

  • 品牌:HGSEMI(华冠)
  • 型号示例:74HC595LQ/TR(LQ 指 QFN 小封装,TR 表示带卷带包装 / Tape & Reel)
  • 包装建议:采用 TR(Tape & Reel)适用于贴片自动化生产;样片或小批量可咨询散装或管装选项。

如需详细引脚定义、时序图或典型电路(级联接法、驱动 LED 示例),可提供进一步的图示与参考电路。

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