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Hottech 2SC1623(L6) 2SC1623
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech 2SC1623(L6)
- Type
- HOTTECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- 2SC1623（L6）
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0229946183
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 100mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SC1623（L6）产品概述
一、概述
2SC1623（L6）为 Hottech（合科泰）推出的一款小功率 NPN 晶体管，SOT-23 封装，适用于便携式信号放大与通用开关场合。其典型电气参数：Ic=100mA、Vceo=50V、Pd=200mW，结合高直流电流增益与较高的特征频率，适合低电流小信号放大与射频前端应用。
二、主要特性
- 集电极电流（Ic）：100 mA（最大）
- 集射极击穿电压（Vceo）：50 V
- 耗散功率（Pd）：200 mW（陶瓷基板/环境依赖）
- 直流电流增益（hFE）：约600（典型，IC=1mA，VCE=6V），低电流下增益极高
- 特征频率（fT）：250 MHz，适合 VHF/高带宽应用
- 集电极截止电流（Icbo）：100 nA（典型，低泄漏）
- 集电极饱和电压（VCE(sat)）：约300 mV（IC=100mA，IB=10mA）
- 射基极反向击穿电压（Vebo）：5 V（注意避免反向 VBE 过压）
三、电性能与典型应用
高 hFE（低电流时）与较高 fT 使 2SC1623 在以下场合表现良好：
- 低功耗前置放大器、传感器放大器与音频小信号级
- 射频/高速小信号放大（VHF 带宽前端）
- 低压开关（驱动继电器/小型负载需注意功耗）
- 电平转换与模拟开关电路
对于开关应用，若需导通 100 mA，建议强制 β≈10 进行基极驱动（IB≈10 mA），例如 5 V 驱动时基阻大约 Rb=(5−0.7)/10mA≈430 Ω。
四、设计与使用注意事项
- 热限制：SOT-23 封装下 Pd 约 200 mW（工况依 PCB 散热而变），在实际电路中要考虑环境温度与铜箔散热，必要时进行功率降额（derating）。
- VBE 反向敏感：Vebo=5 V，避免在电路中将 B–E 施加大反向电压（如开关瞬态保护）。
- 饱和特性：VCE(sat)≈300 mV（IC=100mA, IB=10mA），若需更低饱和压应提高基极注入或选择达林顿/低饱和元件。
- 高频布局：用于高频时注意减小引线长度与走线寄生，地平面完整、输入输出阻抗匹配，减少寄生电容影响。
五、封装与焊接建议
- 封装：SOT-23 小型封装，适合高密度 PCB 设计。具体引脚定义与尺寸请参照厂方封装图纸确认。
- 焊接：遵循常规回流焊温度曲线，避免超温停留；对 ESD 敏感，生产与测试环节做好静电防护。
六、选型与替代
2SC1623 适合追求低电流高增益与中等频率响应的设计场合。选型时若需更高功率或更低 VCE(sat)，可考虑功耗更大的封装或专用低饱和晶体管；若主要需求为超高频特性，可选 fT 更高的 RF 器件。最终替代与布局请以电路测试结果与厂方完整数据手册为准。
如需我提供典型电路参考图、偏置计算示例或与常见替代型号的对比表，可进一步说明应用场景与工作条件。
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