WMSIC Electronic Components

Nexperia PDTC114ET,215 PDTC114ET

Nexperia PDTC114ET,215 PDTC114ET
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Product image

ModelPDTC114ET,215
PackageSOT-23
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

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Technical data

Product details

20 specifications

Core information

Product name
Nexperia PDTC114ET, 215
Type
NEXPERIA
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NEXPERIA
Electronic Component
PDTC114ET,215
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.024g
Electronic Component
1
Electronic Component
BM0000285385
Operating Temperature
65℃~+150℃
Resistor
1
Resistor
13kΩ
Transistor Type
NPN
Frequency(f T)
230MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：PDTC114ET,215

一、简介

PDTC114ET,215 是由安世（Nexperia）推出的一款高性能NPN数字晶体管，广泛应用于各种电子产品中。这款晶体管采用SOT-23-3的表面贴装封装形式，提供了出色的电气性能和低功耗特性，适合应用于开关电路、放大电路、信号处理等多种场合。

二、基本参数

  • 额定功率：250mW
  • 集电极电流 (Ic)：最大100mA
  • 集射极击穿电压 (Vce)：最大50V
  • DC电流增益 (hFE)：在Ic=5mA和Vce=5V时，hFE的最小值为30
  • 基极电阻 (R1)：10 kΩ
  • 发射极电阻 (R2)：10 kΩ
  • 饱和压降 (Vce(sat))：在Ib=500µA和Ic=10mA时，最大饱和压降为150mV
  • 集电极截止电流：最大1µA
  • 跃迁频率：230MHz

三、封装和安装

PDTC114ET,215晶体管采用SOT-23封装，具有良好的散热性能和较小的体积。这种表面贴装型（SMD）设计使得晶体管在空间有限的应用中表现优异，能够轻松集成到各种紧凑型电子设备中。此外，TO-236AB供应商器件封装提供了更加灵活的应用选择，便于在 PCB 设计中进行布局。

四、应用场景

PDTC114ET,215 的多种电子性能使其适用于多种应用场景：

  1. 信号放大：由于其较高的DC电流增益，PDTC114ET,215 可以用于音频放大器或者低功耗无线通信设备中，能够有效地处理信号。

  2. 开关电路：得益于其良好的饱和压降表现，这款晶体管在开关电源、电动机驱动及其他需要快速开关的电路中具备优越的性能。

  3. 数字电路：由于具备较高的跃迁频率，PDTC114ET,215 适合用于高频数字电路，能够满足快速开关与信号处理的需求。

  4. 传感器和控制领域：在各种传感器控制与信号处理应用中，PDTC114ET,215 的小尺寸和低功耗特性使其成为理想选择。

五、优势与特点

  • 高功率处理能力：PDTC114ET,215 的额定功率为250mW，适合在小型电子设备中长期工作。
  • 节能设计：低饱和压降（最大150mV）和低截止电流，使得此晶体管在工作时更加高效，减少能耗。
  • 宽电压范围：最大集射极击穿电压为50V，能够适应各种不同的工作环境。
  • 出色的频率响应：230MHz的跃迁频率表明，这款晶体管在高频应用中的表现优异，能够快速响应信号变化。

六、结语

总之，PDTC114ET,215 是一款非常出色的NPN数字晶体管，凭借其优异的电气性能、紧凑的封装及广泛的应用可能，为现代电子产品的设计和实现提供了可靠的选择。无论是在消费电子、通信设备、还是工业控制领域，PDTC114ET,215 都能够满足用户的高性能需求，是值得投资的先进元器件。

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