WMSIC Electronic Components

Nexperia 2N7002P,215 2N7002P

Nexperia 2N7002P,215 2N7002P
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Product image

Model2N7002P,215
PackageSOT-23
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Nexperia 2N7002P, 215
Type
NEXPERIA
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NEXPERIA
Electronic Component
2N7002P,215
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.024g
Electronic Component
1
Electronic Component
BM0000279529
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：2N7002P,215 N沟道MOSFET

概述

2N7002P,215是由安世半导体（Nexperia）生产的一款高性能N沟道金属氧化物半导体场效应管（MOSFET），其设计旨在提供理想的电源开关解决方案。这款器件在小型封装中集成了多个性能优势，适用于各种电子应用，如低功耗开关、负载驱动、功率管理等。

基本参数

2N7002P,215的主要电气特性包括：

  • 漏源电压（Vdss）：60V，适用于大多数常见的电源电路。
  • 连续漏极电流（Id）：在环境温度25°C下可达到360mA，这使得该MOSFET在各种中小功率应用中表现出色。
  • 栅源极阈值电压（Vgs(th)）：2.4V @ 250µA，提供了合理的驱动电压，确保高效开关控制。
  • 漏源导通电阻（Rds On）：仅为1.6Ω @ 500mA，10V，特别适合需要低导通损耗的应用。

功率及温度特性

该器件的最大功率耗散为350mW（在25°C下），在高温环境中依旧能够保持稳定。然而，其工作温度范围广泛，从-55°C到 150°C（TJ），使其适用于严苛的环境条件下的电子设备。

驱动特性

为了确保MOSFET的高效性能，2N7002P,215具有较低的栅极电荷（Qg），在4.5V时为0.8nC，这使得驱动电路在开关时更加高效，减少能量损耗。此外，其输入电容（Ciss）在10V下的最大值为50pF，这提供了快速的开关响应，能有效处理频繁的开关操作。

应用场景

2N7002P,215适合用于多种应用场景，包括但不限于：

  1. 低功耗开关：该MOSFET非常适合用于低功耗电子设备中的开关应用，如LED驱动电路、传感器负载等。

  2. 电源管理：可以在电源管理电路中充当开关、整流器和电流限制器，帮助提高系统的整体效率。

  3. 马达控制：适用于小功率直流电机的控制和调节，提供了平稳且高效的操作性能。

  4. 自动化设备：在自动化系统和家居智能设备中作为负载切换元件，被广泛应用于控制继电器和其他电子开关。

封装与安装

产品采用TO-236AB（亦称为SOT-23-3）的封装方式，这种紧凑型表面贴装封装不仅节省了PCB空间，也便于自动化焊接，提升了生产效率。其标准化的封装形式使得2N7002P,215易于与其他电子元件整合。

总结

总的来说，2N7002P,215是一款高性能、高效率的N沟道MOSFET，其优异的电气特性和宽广的工作温度范围，使其在电子设计中极具吸引力。无论是用于功率开关、低功耗应用，还是电源管理和电机控制，2N7002P,215都能够提供可靠的性能和卓越的灵活性，适合广泛的应用领域。无论是在工业、汽车还是消费电子中，2N7002P,215都将成为设计师的理想选择。

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