WMSIC Electronic Components

(1 Pcs) CRTT088N10N IPD200N15N3GATMA1 IRF640NPBF-JSM IRF740 IRFBG30PBF IRLB8721PBF-VB IRLZ44NPBF JMSH1004BC TO-220

(1 Pcs) CRTT088N10N IPD200N15N3GATMA1 IRF640NPBF-JSM IRF740 IRFBG30PBF IRLB8721PBF-VB IRLZ44NPBF JMSH1004BC TO-220
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Product image

ModelCRTT088N10N
PackageTO-220
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
8 options
Configuration IRF740 · CNY · IRF740 · BM0225825298 · 1 · 3786911 · 1.02

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Technical data

Product details

20 specifications

Core information

Product name
VISHAY IRFBG30PBF
Type
TO-220
Unit
Pcs
Minimum package
1 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
VISHAY
Electronic Component
IRFBG30PBF
Electronic Component
1
Package
TO-220
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.64g
Electronic Component
1
Electronic Component
BM0093065170
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
125W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFBG30PBF 产品概述

IRFBG30PBF 是一款高性能的 N 沟道金属氧化物半导体场效应管（MOSFET），由知名电子元器件制造商 VISHAY（威世）生产。这款 MOSFET 专为具备高压和高电流要求的应用而设计，广泛应用于电源管理、开关电路、逆变器以及电机驱动等领域。以下是该产品的详细参数和特性。

产品基本参数

  • 漏源电压（Vdss）: 1000V
  • 连续漏极电流（Id, 25°C 时）: 3.1A
  • 栅源极阈值电压（Vgs(th)）: 4V @ 250µA
  • 漏源导通电阻（Rds(on)）: 5Ω @ 1.9A, 10V
  • 最大功率耗散（Pmax）: 125W @ 25°C (Tc)
  • 工作温度范围: -55°C ~ 150°C
  • 封装类型: TO-220AB

性能特征

IRFBG30PBF 具备优秀的电气性能与可靠性。其最大漏源电压为 1000V，适合于高压应用的需求。连续漏极电流规格为 3.1A，使其在多种功率转换电路中表现优异。产品的最大功率耗散能力为 125W（在 Tc = 25°C 时），进一步提升了其在高功率场合中的适用性。

该 MOSFET 的栅源阈值电压为 4V，这意味着在这个电压下能够确保器件导通，并且在 10V 的驱动电压下，其导通电阻小至 5Ω，表现出了出色的导电能力。低导通电阻特性有助于降低功率损耗，提高系统的整体效率。

应用场景

IRFBG30PBF 常被应用于电源转换器、开关电源、交流电机驱动，以及逆变器等领域。在这些应用中，MOSFET 的高 Voltage 和大电流特性可以轻松满足高功率和高效率的需求。此外，这款 MOSFET 还适用在汽车电子、可再生能源设备以及各种工业控制系统中，显示出其广泛的适应性。

安装与封装

IRFBG30PBF 采用 TO-220AB 封装，具有较好的散热性能与可靠的机械强度。这种通孔安装类型的封装设计不仅便于安装，也能在需要较高散热性能的应用场景中发挥重要作用。TO-220AB 封装能够适应多种电路板设计，并允许用户通过附加散热片进一步增强其散热能力。

总结

总之，IRFBG30PBF 是一款功能强大且具备良好规格的 N 沟道 MOSFET，适合用于各类高功率、高电压的应用场合。其优秀的电气性能、高效的导通能力和稳固的封装设计，使其成为电源管理和开关应用的理想选择。凭借 VISHAY 品牌的卓越品质和可靠性，IRFBG30PBF 定会为您的项目提供可靠的支持与保障。

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