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YONGYUTAI AO3407A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- YONGYUTAI AO3407A
- Type
- YONGYUTAI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YONGYUTAI
- Electronic Component
- AO3407A
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264770663
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.3W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO3407A 产品概述
一、主要参数
- 类型：P沟道MOSFET（SOT-23封装）
- 漏源电压 VDS(max)：-30V
- 连续漏极电流 ID：-4A
- 导通电阻 RDS(on)：典型 41mΩ @ VGS = -10V；最大 <51mΩ @ -10V；最大 <70mΩ @ -4.5V
- 耗散功率 Pd：1.3W（封装及环境依赖）
- 栅极阈值 VGS(th)：约 1.8V
- 总栅极电荷 Qg：9nC @ 10V
- 输入/输出/反向传输电容：Ciss = 480pF，Coss = 65pF，Crss = 46pF
- 工作温度：-55℃ ~ +150℃
- 品牌：YONGYUTAI（永裕泰）
二、关键特性
AO3407A 采用先进沟槽工艺，兼顾低 RDS(on) 与较小栅极电荷，适合对开关损耗和驱动功率敏感的场合。VDS=-30V 的额定保证了在中低电压轨（如12V/24V系统）中的可靠性；在 VGS = -10V 驱动时能提供低导通损耗，VGS = -4.5V 时仍能维持中等导通性能，便于电源管理电路直接驱动。
三、典型应用
- PWM 开关（负载开关、同步降压反馈回路）
- 便携式电源与电池管理（高侧开关）
- 电源管理与反接保护
- 小功率电机驱动与负载切换
四、设计与布局建议
- 驱动电压：为获得最低 RDS(on)，建议 VGS 接近 -10V；若驱动电压较低（如 -4.5V），请确认允许的导通损耗与温升。
- 栅极驱动：Qg≈9nC，在中高速开关时需要考虑驱动器能力与栅极电阻以抑制振铃和开关损耗。
- 热管理：Pd = 1.3W 为封装限值，实用设计应考虑 PCB 铜箔散热与环境温度，必要时对器件进行热降额。
- 布局：尽量缩短漏-源及栅极回路的走线，靠近器件放置去耦与续流二极管，减小寄生电感。
- 保护：注意器件的最大栅源电压与浪涌耐受能力，设计中加入限流、RC缓冲或TVS 以防瞬态过压。
五、封装与可靠性
SOT-23 小型封装适合空间受限应用，但散热能力有限。器件在 -55℃ 至 +150℃ 的额定温度范围内工作，工业级温度覆盖常见应用场景。封装小、引脚短，便于高速开关，但在焊接与装配时应采取防静电与温度控制措施以保证可靠性。
总结：AO3407A 为一款面向中低电压、高侧P沟道开关的通用型MOSFET，特点是低导通阻抗与较小栅极电荷，适合PWM与电源管理等需要在受限空间内实现高效开关的场合。
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