WMSIC Electronic Components

ZD25WD20BUIGR

ModelZD25WD20BUIGR
PackageDFN8 2x3x0.50mm
BrandZETTA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Zetta ZD25WD20BUIGR
Type
ZETTA
Minimum package
3000 原盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ZETTA
Electronic Component
ZD25WD20BUIGR
Electronic Component
1
Package
DFN8 2x3x0.50mm
Electronic Component
NOR FLASH
Electronic Component
0.03g
Electronic Component
1
Features
positions
Electronic Component
BM0264500216
Electronic Component
2Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
1.65V~3.6V
Current
12uA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ZD25WD20BUIGR 产品概述

一、产品简介

ZD25WD20BUIGR 是澜智(Zetta)推出的一款高可靠性 SPI NOR Flash,存储密度为 2Mbit(256KB)。器件工作电压宽泛(1.65V 至 3.6V),最大 SPI 时钟频率可达 104MHz,适配低功耗及高性能嵌入式系统。封装为小尺寸 USON-8-EP(DFN8 2×3×0.50mm),并提供 Tape & Reel 卷带供料,适合自动贴片生产线。

二、主要规格

  • 存储容量:2Mbit(256KB)
  • 接口类型:SPI(兼容主流 SPI 控制器)
  • 最大时钟:104MHz
  • 工作电压:1.65V ~ 3.6V
  • 待机电流:典型 12µA
  • 工作温度:-40°C ~ +85°C
  • 页写入时间(Tpp):约 2ms
  • 块擦除时间(tBE):约 10ms(64KB)
  • 擦写寿命:100,000 次
  • 数据保留(TDR):20 年

三、功能特性

  • 硬件写保护与绝对写保护:提供物理级别的写保护机制,防止误写或固件被篡改。
  • 写使能锁存(Write Enable Latch):标准写使能流程,保证编程/擦除操作的受控触发。
  • 软件写保护:通过命令配置区域性保护,适合固件管理与版本控制。
  • 上电复位(POR):内置上电复位电路,保证电源瞬变时器件回到可知状态。
  • 低功耗特性:在待机时极低电流,有利于电池供电设计。

四、封装与可靠性

  • 封装:DFN8(2.0×3.0×0.50mm),带露铜散热/接地焊盘(EP),有助于热管理与可靠焊接。
  • 装带方式:Tape & Reel,方便 SMT 自动化生产。
  • 可靠性:支持 100k 次擦写循环与 20 年数据保持,满足工业级长期存储需求。

五、设计建议

  • 电源旁路:在 VCC 近端放置 0.1µF 陶瓷旁路电容,降低高频抖动;若存在长电源线,建议增加 1µF~4.7µF 旁路。
  • 焊盘与散热:推荐将器件底部露铜焊盘与 PCB 接地相连并通过过孔导热,以利于焊接与散热。
  • 电平兼容:若主控电压超过 3.6V,需使用电平移位;器件支持宽电压范围,适合多种系统。
  • 写保护管理:在需要长期数据安全的应用中,优先使用硬件/绝对写保护,并在固件更新流程中明确写使能步骤与超时保护。
  • 时序遵循:编程前务必发出写使能命令并等待 tPP/tBE 等操作完成再进行下一步访问。

六、典型应用

  • MCU/MPU 引导存储(Boot ROM)
  • 配置与参数存储(Calibration、Device ID)
  • 工业控制器与仪表
  • 物联网终端、可穿戴设备与低功耗传感节点

ZD25WD20BUIGR 在体积、低压、低功耗与工业级可靠性之间取得平衡,适合需要稳定闪存存储和防误写保护的嵌入式及工业应用。若需引脚图、命令集或参考电路图,建议下载澜智官方数据手册以获取完整时序与寄存器说明。

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