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LRC L2N7002LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC L2N7002LT1G
- Type
- MOSFETs
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- L2N7002LT1G
- Electronic Component
- 1
- Package
- SOT-23(SOT-23-3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0000004175
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 17pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
L2N7002LT1G 产品概述
概述
L2N7002LT1G 是一款低电压 N 沟道场效应管 (MOSFET)，其广泛应用于低功耗电源管理电子设备中。采用 SOT-23 封装，这款器件凭借其出色的性能和小巧的尺寸，成为了众多电子设计师的热门选择。主要特性包括 300mW 的功率输出能力、60V 的耐压值和最高 115mA 的电流通过能力，使其在各种低功率应用环境中十分适合。
关键参数
- 封装类型: SOT-23 (SOT-23-3)
- 类型: N 沟道 MOSFET
- 最大功耗: 300mW
- 漏极-源极耐压 (V_DS): 60V
- 最大漏极电流 (I_D): 115mA
- 栅极阈值电压 (V_GS(th)): 2V 至 4V（典型值）
- 开关时间: 快速开关特性
应用场景
L2N7002LT1G 适合各种领域的应用，典型场景包括：
低功耗开关: 该 MOSFET 能够用于电源开关或负载开关，提供了高效的电源管理方案。由于其在不同电压情况下的稳定性能，L2N7002LT1G 适用于电池供电的设备。
线性调节器: 可以用作线性调节器的控制元件，在智能手机、便携式设备等低功耗电子产品中发挥重要的作用。
信号开关: L2N7002LT1G 在信号路径中的应用，可以用于数字电路中的级联连接，支持高速开关操作，确保信号完整性。
主要应用于工业控制: 由于自身的高耐压特性，L2N7002LT1G 适合于工业自动化控制系统中，用于驱动各种执行元件。
性能优势
高效率: L2N7002LT1G 在额定工作条件下展现出较低的导通电阻 (R_DS(on))，降低了功耗，提升了工作效率。这一特性使其在需要高效能的电路设计中十分受欢迎。
耐高压能力: 最大 60V 的耐压设计为其在复杂和高压电路中提供了良好的兼容性，确保 Safe operation area (SOA) 不会受到影响，提升了系统的稳定性。
小型封装: SOT-23 封装不仅有助于降低电路板的空间占用，还能提高电路的紧凑性和可集成度，适应现代电子产品日益向小型化、轻量化发展的趋势。
易于驱动: 作为 N 沟道 MOSFET，L2N7002LT1G 只需较低的栅源电压（V_GS）便可充分导通，适于与微控制器直接连接，从而简化系统设计，并方便驱动控制。
总结
L2N7002LT1G 是一款具备高性价比的 N 沟道 MOSFET，凭借其卓越的性能特征和适应广泛应用场景的能力，成为电子设计师在低电流、高耐压环节的理想选择。无论是在消费电子、工业控制还是智能家居等领域，它都能提供优秀表现，为用户打造高效、安全及稳定的电源管理解决方案。
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