WMSIC Electronic Components

ADI/LINEAR MAX31790ATI+T MAX31790ATI

ModelMAX31790ATI+T
PackageTQFN-28-EP(4x4)
BrandADI/LINEAR
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ADI(Analog Devices) / LINEAR MAX31790ATI+T
Type
ADI/LINEAR
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ADI(Analog Devices) / LINEAR
Electronic Component
MAX31790ATI+T
Electronic Component
1
Package
TQFN-28-EP(4x4)
Electronic Component
Brushed DC Motor Driver IC
Electronic Component
0.5g
Electronic Component
1
Integrated FET
Electronic Component
Features
Electronic Component
Electronic Component
BM0258837952
Operating Temperature
40℃~+125℃
Operating Voltage
3V~5.5V
Interface Type
I2C
Static Current(Iq)
3mA
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MAX31790ATI+T 产品概述

一、核心参数概览

MAX31790ATI+T(ADI/Linear)是一款集成FET的电源/驱动类器件,主要参数如下:工作电压范围 3.0V ~ 5.5V;带集成功率开关(Integrated FET);通过 I2C 总线进行配置与控制;静态电流 (Iq) 典型约 3mA;工作温度范围 -40℃ ~ +125℃;封装为 TQFN-28-EP(4×4mm)。本器件并非内置 H 桥(H-bridge 数量:0),适于作为点位开关或预驱动器使用。

二、器件定位与功能说明

该器件定位为可通过数字总线精细控制的功率开关/驱动单元。集成 FET 降低外部器件数量与 PCB 面积,I2C 接口便于在系统中通过寄存器配置开关状态、输出模式及定时/保护参数(具体寄存器与功能以器件数据手册为准)。由于不包含 H 桥,若需双向驱动或全桥驱动,则需外接互补 FET 或采用外部 H 桥方案协同工作。

三、典型应用场景

  • 小型直流电机的断电/通电控制、风扇或转子供电开关;
  • 机器人与精密执行器的电源分配与负载开关控制;
  • 工业与汽车电子的电源管理模块(受温度范围适配);
  • 需要通过 I2C 集中监控与控制的多路开关阵列。

四、封装与热管理要点

TQFN-28-EP(4×4mm)带底部散热金属垫(EP),建议在 PCB 设计时配合多层散热过孔与大铜箔热盲区,以保证功率损耗时的热传导。输入输出路径应尽量短且宽,关键旁路电容靠近电源引脚布局。由于器件工作电压上限为 5.5V,设计时应考虑浪涌与反向瞬态抑制。

五、系统集成与使用建议

  • I2C 总线需加拉高电阻,注意总线电压兼容性与上拉阻值选择;
  • 启动序列与电源监测应避免在欠压或瞬态下驱动大电流负载;
  • 评估功率耗散与外壳/环境温度对输出电流的热限影响;
  • 在需要双向或再生能量处理时,配合外部 H 桥或能量回收电路使用。

六、选择理由与注意事项

该器件优势在于:低静态功耗(Iq≈3mA)、宽工作电压与工业级温度覆盖、集成 FET 简化 BOM 与板级布局。注意其并非内置 H 桥,功能与保护细节应以官方数据手册为准,开发前需获取完整数据资料与评估样片测试结果。

如需我帮您整理该型号的数据手册要点、引脚定义或典型应用参考电路,我可以继续提供。

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