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AOS AO7800
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AO7800
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO7800
- Electronic Component
- 1
- Package
- SC-70-6(SOT-323-6)
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0000280214
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 190mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：AO7800 MOSFET
AO7800是一款高性能的双N沟道场效应管（MOSFET），专为低压应用而设计，适合驱动高效能电源管理、电机控制和开关电路等多种技术领域。该产品以其出色的电气特性和紧凑的封装形式（SC-70-6L）在市场上脱颖而出，是电子设计工程师的理想选择。
一、基本参数
AO7800的主要参数包括：
- 漏源电压（Vdss）：20V
- 连续漏极电流（Id，25°C时）：900mA
- 栅源极阈值电压：通常在900mV @ 250µA
- 漏源导通电阻：300mΩ @ 900mA, 4.5V
- 最大功率耗散：300mW（在环境温度25°C时）
- 封装类型：SC-70-6L（SOT-363-6）
这些参数表明，AO7800在相对较低的电压下能够简化电路设计，并提供良好的功率效率，适用于中小功率模块的开发。
二、产品特性
高效能导通特性：AO7800具有低导通电阻（300mΩ），这意味着在电流通过时所产生的功耗极低，有助于提高整个电源系统的效率。
低栅源阈值电压：其900mV的栅源阈值电压使得该MOSFET适用于更低驱动电压的应用，从而提高了其适用的灵活性和广泛性。
稳健的功率处理能力：能够承受高达300mW的功率耗散，这使得AO7800在高负载的推动下依然能够保持稳定的性能。
双N沟道设计：集成的双N沟道结构使得AO7800在功能上具有更高的集成度，适合用于需要多个开关的复杂电路。
紧凑的封装：SC-70-6L封装带来的小尺寸极大地节省了电路板空间，使得AO7800适合于空间受限的应用环境。
三、应用场景
AO7800广泛应用于以下领域：
电源管理：在开关电源和DC-DC转换器中，AO7800可以作为高效能开关控制器，提升功率转换效率。
电机驱动：由于其出色的开关特性，AO7800可用于直流电机驱动电路中，适合小型电动工具、家电和机器人等应用。
汽车电子：在汽车中用于各种控制和驱动电路，特别是在低功耗和高集成度的控制系统中。
消费电子：在智能手机、平板电脑以及其他便携式设备中，AO7800可用于电源管理和负载切换，优化设备的电力消耗。
四、总结
AO7800 MOSFET凭借其卓越的低导通电阻、稳定的功率处理能力及灵活的电压范围，为设计工程师提供了一个高性价比的解决方案。它的小巧封装和双N沟道设计使其在多种电子应用中展现出优秀的性能，无论是在移动设备、汽车电子还是电源管理领域，AO7800都是一种值得信赖的选择。选择AO7800，您将获得高效率与可靠性的完美结合，为您的设计带来更多可能性。
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