WMSIC Electronic Components

AOS AON7264E

AOS AON7264E
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Product image

ModelAON7264E
PackageDFN-8(3x3)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

20 specifications

Core information

Product name
AOS AON7264E
Type
AOS
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON7264E
Electronic Component
1
Package
DFN-8(3x3)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.054g
Electronic Component
1
Electronic Component
BM0000279233
Operating Temperature
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
60V
Capacitor(Ciss)
1.1nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON7264E 产品概述

1. 产品简介

AON7264E是一款高性能的N沟道MOSFET，专为需要高电流和高电压条件的应用而设计。其关键参数包括连续漏极电流（Id）为28A，漏源电压（Vdss）为60V。这款产品的额定功率耗散高达5W，非常适合于电源管理和开关电路等各种电子应用场景。AOS作为知名的电子元器件制造商，其MOSFET产品以高质量和高可靠性著称，使得AON7264E在市场中更具竞争优势。

2. 关键电气参数

  • 连续漏极电流（Id）：在25°C下，AON7264E可承载的连续漏极电流为28A，适用于较大负载电流的应用。

  • 漏源电压（Vdss）：最大漏源电压可达到60V，为高电压环境下的应用提供了稳健的性能。

  • 栅源极阈值电压：该产品的栅源阈值电压约为2.4V（@ 250μA），允许在较低的控制电压下实现导通，增强了系统的通用性和兼容性。

  • 漏源导通电阻：在17A、10V的条件下，漏源导通电阻为9.5mΩ，这一低阻抗特性减少了功率损耗和发热，提升了整体系统效率。

  • 最大功率耗散（Ta=25°C）：AON7264E的最大功率耗散为5W，确保其在安全范围内运行，避免超过热极限。

3. 封装和尺寸

AON7264E采用DFN-8（3x3）的封装设计。这种紧凑型封装不仅节省了空间，同时也使得散热效果良好，有助于在高功率条件下保持低温工作。此外，DFN封装的低引线电感特性进一步增强了该器件在开关应用中的响应速度，有效提升系统整体性能。

4. 应用领域

AON7264E广泛应用于多个领域，具体包括但不限于：

  • DC-DC转换器：在电源管理和电池供电系统中，MOSFET可用于高效的开关功能。
  • 电机驱动：可作为马达驱动电路中的开关元件，承受较大的瞬态电流。
  • LED驱动：在LED照明应用中，MOSFET能够提供快速有效的开关控制。
  • 电源管理：在消费电子和工业设备中，实现高效率的电源转换和管理。

5. 性能优势

AON7264E具备多个性能优势，使其成为理想的选择。首先是其优良的导通电阻特性，能够在大电流下显著降低能量损失。其次，低多少的阈值电压使得在各种控制电压下工作的灵活性大大提高。综上所述，AON7264E为追求高效率、高可靠性的设计提供了理想的解决方案。

6. 结论

综上所述，AON7264E是一款优秀的N沟道MOSFET，为工业和消费电子产品提供了高效、稳定的解决方案。其高电压和高电流承载能力、低导通电阻以及适用广泛的封装类型，使其在各种苛刻环境下依然表现出色。工程师和设计师们在选择MOSFET时，AON7264E将是一个值得信赖的选择，能够有效提升电路表现和系统整体效率。

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