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AOS AOSP21321
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AOSP21321
- Type
- AOS
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AOSP21321
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.218g
- Electronic Component
- 1
- Electronic Component
- BM69413795
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.18nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOSP21321 产品概述
AOSP21321是一款高性能的P沟道MOSFET，采用表面贴装型封装（SOIC-8），其独特的设计兼具高效能与出色的热管理能力，适用于多种电子应用场景。这款MOSFET凭借其高导通能力和低导通电阻，广泛应用于开关电源、DC-DC转换器、马达驱动以及其他需要高效率和快速切换的电路中。
主要参数
导通电阻与电流能力： AOSP21321在11A电流下，导通电阻（Rds On）最大值为17毫欧（@10V Vgs），这意味着在实际应用中能有效减少能量损耗，提高系统整体效率。其在25°C时的连续漏极电流（Id）为11A，使其在多个高负载应用中均能表现优异。
电压特性： 本产品的漏源电压（Vdss）为30V，符合大多数中低电压应用需求。最大的栅极到源极电压（Vgs）为±25V，充分确保了在信号变化时的稳定性和安全性。
驱动电压： AOSP21321具有灵活的驱动电压，支持4.5V至10V的范围。这使得它能够轻松与常见的微控制器和数字电路接口，优化驱动条件以获取最佳性能。
输入电容与开关特性： 在15V的状态下，输入电容（Ciss）最大值为1180pF，这降低了驱动电路所需的驱动功率，同时也提高了切换速度。此外，栅极电荷（Qg）在10V下最大为34nC，保证快速开关特性，减少了在高频操作时的延迟。
阈值电压： 在不同的漏极电流（Id）条件下，栅源阈值电压（Vgs(th)）最大值为2.3V（@250µA），这个特性使得AOSP21321在低电平信号下也能可靠导通，进一步扩展了其应用范围。
工作温度范围： AOSP21321支持的工作温度范围为-55°C至150°C，保证在各种极端环境条件下的稳定性和可靠性。此特性让它成为高温、高压、恶劣环境等应用的重要选择。
应用领域
由于其出色的电气特性和热管理能力，AOSP21321通常被用于以下应用场景：
- DC-DC转换器：高效电能转换，能在开关频率较高的应用中表现优异。
- 电机驱动：提供强大的电流支持，使高功率电机控制更加精确和高效。
- 电源管理：在电源管理电路中作为开关元件，提供低损耗和高效能。
- 家庭电气设备：适合在家用电器中作为控制组件，确保长期稳定运行。
总结
AOSP21321是一款集高效率、良好热管理和广泛应用特点于一身的P沟道MOSFET，适合需要高电流驱动和低电阻特性的应用。无论是在日常电子产品或专业设备中，它都能发挥优异性能，为用户提供可靠和高效的解决方案。对于寻求优化功率损耗及提升设备性能的工程师来说，AOSP21321无疑是理想的选择。
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