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AOS AOD413A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AOD413A
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AOD413A
- Electronic Component
- 1
- Package
- DPAK
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.483g
- Electronic Component
- 1
- Electronic Component
- BM0000279226
- Power Dissipation(Pd)
- 50W
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOD413A 产品概述
产品概述： AOD413A 是一款高性能的 P 沟道场效应管（MOSFET），采用 TO-252 封装设计，并能够实现优异的电气性能和热管理能力。该器件特别适用于功率开关和电源管理应用，广泛应用于高效电源转换、电机控制、以及其他需要高效率和高可靠性的电路中。
关键参数：
- 漏源电压（Vdss）: 40V
- 连续漏极电流（Id）: 12A（在 25°C 时）
- 栅源极阈值电压: 3V @ 250uA
- 漏源导通电阻: 44mΩ @ 12A，10V
- 最大功率耗散: 2.5W（在 Ta = 25°C 时）
- 类型: P 沟道 MOSFET
- 封装: TO-252
电气特性： AOD413A 的漏源电压（Vdss）为 40V，这保证了其在高电压条件下的工作可靠性。其连续漏极电流（Id）为 12A，使得 AOD413A 能够承受较大的负载，适合于多种应用场合。此器件的栅源极阈值电压仅为 3V，能够确保在较低电压下也能正常导通，适合与多种驱动电路组合使用。
导通电阻和功率耗散： AOD413A 的漏源导通电阻为 44mΩ，这一较低的导通电阻值有助于降低功耗和提升效率。低导通电阻意味着在大电流通过时发热更少，对于设计高效能电源方案至关重要。此外，此 MOSFET 的最大功率耗散为 2.5W，可以有效地处理一定的热量，确保长期可靠运行。
应用领域： AOD413A 适用于多种应用，包括：
- DC-DC 转换器: 借助其较低的导通电阻和突出的电气性能，在电源适配器和逆变器等设备中实现高效的能量转换。
- 电机驱动: 在电机控制电路中，AOD413A 可以作为开关元件，提供快速响应和高效电源管理。
- 电源管理: 适用于各种电源管理电路，包括充电器、供电模块等，具有较高的集成度和效率。
封装优势： AOD413A 使用的 TO-252 封装形式既Compact又散热性能良好，适合在空间受限的应用中使用。TO-252 结构简化了 PCB 布局设计，提高了生产效率，同时其良好的导热特性能够帮助器件快速释放热量，从而提升整体系统的可靠性。
总结： AOD413A 是一款性能出色的 P 沟道 MOSFET，非常适合用于需要高效率和良好热管理的各类应用场景。凭借其优异的电气特性，低导通电阻和适应性强的封装设计，AOD413A 在当前的市场中占据了一席之地，为电子设计工程师提供了一个可靠的解决方案。无论是在电源转换、电机控制，还是在复杂的电源管理应用中，AOD413A 都能胜任相应的任务，为各种电气设计提供可靠支撑。
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