WMSIC Electronic Components

AOS AON7934

AOS AON7934
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Product image

ModelAON7934
PackageDFN-8(3x3)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

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Technical data

Product details

20 specifications

Core information

Product name
AOS AON7934
Type
AOS
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON7934
Electronic Component
1
Package
DFN-8(3x3)
Electronic Component
2 N
Electronic Component
MOSFET
Electronic Component
0.11g
Electronic Component
1
Electronic Component
BM0000284915
Operating Temperature
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
485pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：AON7934 双N沟道场效应管 (MOSFET)

AON7934 是一款高性能的双N沟道场效应管（MOSFET），它采用了先进的半桥架构，专为高效能和高密度电子应用而设计。此产品的主要特点和性能参数包括：漏源电压 (Vdss) 为 30V，连续漏极电流 (Id) 在 25°C 时可达到 13A 或 15A，这使其在许多应用场景中表现优异，如电源管理、DC-DC转换器和电机驱动等。

主要技术参数

  1. 漏源电压 (Vdss): AON7934 能承受的最高漏源电压为 30V，这个电压等级使得它适用于大多数低压功率电路。无论是在电源开关、负载驱动还是其他低电压应用中，这一特性都能提供稳定的性能。

  2. 连续漏极电流 (Id): 在室温（25°C）下，AON7934 的连续漏极电流可达 13A 至 15A，能够满足多个高电流应用需求。其较高的电流承载能力使得它能够处理更多的负载，极大提高了系统的可靠性和有效性。

  3. 栅源极阈值电压: AON7934 的栅源极阈值电压为 2.2V @ 250μA，意味着其可以在较低的栅压驱动下实现有效导通，这对降低系统功耗和优化驱动电路设计至关重要。

  4. 漏源导通电阻 (RDS(on)): 在 10V 驱动电压下，AON7934 的导通电阻为 10.2mΩ @ 13A，这一特性显著降低了功耗并提升了能效，尤其在频繁开关的设备中尤为重要。低导通电阻可以有效减少能量损耗，降低热量生成，提高系统效率。

  5. 最大功率耗散: 在环境温度为 25°C 时，AON7934 的最大功率耗散可达 2.5W。这表明在设计电路时需要考虑散热解决方案，确保MOSFET在安全工作范围内运行，从而延长其使用寿命并增强电路的可靠性。

封装与应用

AON7934 采用 DFN-8（3x3mm）封装设计，这种小巧的封装形式使得其适合于空间受限的应用。DFN 封装具有优良的热管理能力，能够有效降低功率耗散过程中产生的热量，从而提高整机的性能。

针对市场需求，AON7934 助力于多个应用领域：

  • 电源管理: 用于开关电源、DC-DC 转换器和其他高效电源解决方案。
  • 电机控制: 适用于电机驱动、逆变器和其他自动化设备。
  • 消费电子: 用于智能手机、可穿戴设备和其它便携式电源驱动系统。

结论

AON7934 双N沟道MOSFET 以其优越的电气性能和小型封装设计，在多个领域展现出极大的应用潜力。它的高电流承载能力、低导通电阻以及低阈值驱动电压使其成为现代电源管理和控制电路中不可或缺的重要元件。针对使用者的多样需求，AON7934 提供了灵活、高效且可靠的解决方案，适用于当今快速发展的电子市场。

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