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AOS AO6800
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AO6800
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO6800
- Electronic Component
- 1
- Package
- TSOP-6
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM0000280212
- Power Dissipation(Pd)
- 1.15W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO6800 产品概述
产品简介
AO6800 是一款高性能 N-通道 MOSFET（场效应管），由 AOS（Advanced Power Electronics Corp.）公司生产，专为要求高效能和小型化设计的电子应用而设计。该器件采用了表面贴装型（SMD）封装，产品封装为 TSOP-6，适用于现代电子设备的小型化设计。
基本参数
AO6800 的主要电气特性包括：
导通电阻（RDS(on)）：在 3.4A 和 10V 的条件下，AO6800 的最大导通电阻为 60 毫欧。这一指标在确保低功耗和高效率的同时，帮助降低热损耗，延长产品使用寿命。
连续漏极电流（Id）：可在 25°C 环境下，提供高达 3.4A 的连续漏极电流，确保在较高负载条件下的可靠性。
漏源电压（Vdss）：该 MOSFET 可以承受高达 30V 的漏源电压，适合多种中低电压应用。
输入电容（Ciss）：在 15V 的工作条件下，输入电容最大为 235pF。这一较小的输入电容值使得对驱动信号的响应更加迅速，提高了开关频率。
栅极电荷（Qg）：在 10V 的栅极驱动下，栅极电荷最大为 10nC，保证了MOSFET能在高频场合保持较快的开关速度。
阈值电压（Vgs(th)）：在 250μA 的条件下，Vgs(th) 最高为 1.5V，意味着该器件能够在低电压下实现较好的导通，从而提高了逻辑控制和驱动的灵敏度。
工作温度
AO6800 的工作温度范围为 -55°C 到 150°C（TJ），这表明该器件适用于各种极端环境，满足了航空航天、汽车以及工业设备等对元器件性能的严格要求。
功率
该 MOSFET 的最大功率值为 1.15W，适合用于有限空间内的小型电源管理、驱动电路等应用，同时有效保障了系统的热管理。
应用场景
AO6800 的广泛应用场景包括但不限于：
- 电源管理：用于DC-DC转换器、线性稳压器等电源管理电路，提供有效的能量转换。
- 驱动电路：在电机驱动、灯光控制和其他开关控制应用中充当开关元件，能够以高效的方式控制负载。
- 工业和消费电子：适用于诸如智能家居设备、电动工具、通信设备等领域，能够满足现代电子器件在功耗、体积和响应速度上的严格需求。
结论
AO6800 MOSFET 是一款兼具高性能和高可靠性的 N-通道场效应管，适用于多种工业和消费应用，是当前市场上先进电子设备不可或缺的核心元件之一。通过精确的电气特性，优化的热管理能力，以及小型的封装设计，AO6800 不仅可以满足设计师对性能的需求，同时也有助于缩小产品体积，提高集成度，实现更加高效的电子解决方案。
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