WMSIC Electronic Components

AOS AO9926B

ModelAO9926B
PackageSOIC-8
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
AOS AO9926B
Type
AOS
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AO9926B
Electronic Component
1
Package
SOIC-8
Electronic Component
2 N
Electronic Component
MOSFET
Electronic Component
0.197g
Electronic Component
1
Electronic Component
BM0264967356
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO9926B 产品概述

一、产品简介

AO9926B 是一款高性能的双N沟道MOSFET,封装形式为SOIC-8L。该元件专为需要高效率和低导通电阻的电子应用而设计,能够在很宽的工作范围内提供稳定的性能表现。它的最大漏源电压(Vdss)为20V,连续漏极电流(Id)为7.6A,使得该器件广泛适用于各种电源管理、开关电源以及驱动电路等应用中。

二、主要参数

  1. 漏源电压(Vdss): 20V

    • 作为一款MOSFET,AO9926B 的漏源电压上限为20V,适合用于低压电源电路中。该特性使其能够在许多典型的电源应用中提供稳妥的电压保护。
  2. 连续漏极电流(Id): 7.6A @ 25°C

    • 在正常的工作环境下,AO9926B 能够承受7.6A的连续电流,使其成为高效率开关电源的理想选择。尤其适合需要较高电流输出的驱动应用场合。
  3. 栅源极阈值电压: 1.1V @ 250μA

    • 该产品的栅源极阈值电压为1.1V,表明其开启所需的最低电压非常低。使得在较低电压驱动的情况下,也能够确保MOSFET快速响应,从而更好地提高电路的开关效率。
  4. 漏源导通电阻: 23mΩ @ 7.6A, 10V

    • 低导通电阻是AO9926B的一大亮点,23mΩ 的值意味着在运行过程中,将损耗降至最小,从而提高设备的整体能效。这对于要求高效散热的电子产品特别重要。
  5. 最大功率耗散: 2W @ Ta=25°C

    • AO9926B 在环境温度为25°C时,最大功耗为2W。设计电路时需注意这一参数,以确保器件在安全的功率范围内工作,避免因过载而导致的故障。

三、应用领域

AO9926B的特性使其适用于多个典型应用场景,如:

  • 开关电源:在AC/DC和DC/DC转换器中,用于提高能效和输出稳定性。
  • 电机驱动:在马达驱动电路中,AO9926B能够提供必要的电流和快速开关能力,从而提升马达的响应速度及控制精度。
  • LED驱动:作为LED照明系统中的开关元件,可以有效提升电流驱动能力,延长LED的使用寿命。
  • 电池管理系统:在电池充电和放电过程中,MOSFET为电池提供了稳定的电流通路,是保护电路中不可或缺的元器件。

四、技术优势

  • 高效率:得益于其低导通电阻,AO9926B在高电流工作时能显著降低功耗,提高整体系统效率。
  • 宽工作范围:最大漏源电压为20V的设计,使得该产品适合多种电源和驱动应用中的使用,极大扩展了其应用场景。
  • 小型化设计:SOIC-8L的封装形式不仅在体积上节省空间,还便于PCB布局设计,适合现代电子设备对小型化的要求。

五、总结

AO9926B是一款功能强大、性能稳定的双N沟道MOSFET,凭借其出色的电气特性和适应广泛的应用能力,使其成为现代电子产品中重要的基础元件。无论是在消费电子、电机驱动,还是在电源管理系统中,AO9926B都能够提供必需的支持,帮助工程师们打造出更高效、可靠的电子产品。

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