WMSIC Electronic Components

AOS AON6262E

ModelAON6262E
PackagePDFN-8(5.2x5.6)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
AOS AON6262E
Type
AOS
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON6262E
Electronic Component
1
Package
PDFN-8(5.2x5.6)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.117g
Electronic Component
1
Electronic Component
BM0257639541
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
6.2W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON6262E 产品概述

产品简介

AON6262E 是一款高性能的 N 沟道场效应管 (MOSFET),具有良好的电气性能和高功率处理能力,非常适合各种高效能应用。该器件的最大漏源电压为 60V,能够处理高达 40A 的连续漏极电流,且其热特性出色,适合在高功率环境下工作。AON6262E 采用 DFN5x6-8L 封装,尺寸为 5.2mm x 5.6mm,具有优异的散热性能和小型化优势,使其在多种应用场景中极具竞争力。

关键参数

  • 漏源电压 (Vdss): 60V
  • 连续漏极电流 (Id): 40A (在 Tc = 25°C 时)
  • 栅源极阈值电压: 2.2V @ 250µA
  • 漏源导通电阻 (Rds(on)): 6.2mΩ @ 20A, 10V
  • 最大功率耗散: 48W (在 Ta = 25°C 的条件下)
  • 类型: N 沟道
  • 封装: DFN5x6-8L EP1

应用领域

AON6262E 由于其高电流处理能力和低导通电阻,适用于多种电子设备和电源管理应用,包括:

  1. 电源转换器: 作为开关元件,AON6262E 可以有效地提高 DC-DC 转换器的效率,降低电源损耗。
  2. 电机驱动器: 在电机驱动和控制应用中,它可以用作驱动信号放大的元件,确保高效驱动电机或其他负载。
  3. 启停电路: 该 MOSFET 能够在启停电路中快速响应,适用于需要迅速切换的应用。
  4. 功率放大器: 在无线通信和音频放大器等应用中,AON6262E 可以显著提高设备的性能和稳定性。

性能优势

  1. 低导通电阻: AON6262E 的 Rds(on) 仅为 6.2mΩ,意味着在高电流条件下能量损耗极小,从而提高整体效率。这一特性使它特别适合于需要高效能量管理的应用。

  2. 高耐压和高电流承载能力: 最大漏源电压为 60V,支持在多个设计和操作环境下工作,能够处理高达 40A 的连续电流,扩展了其应用的灵活性。

  3. 小型封装: DFN5x6-8L 封装不仅提供了热管理方面的优越性,且小型化的设计适合现代电子设备日益缩小的尺寸需求。

  4. 良好的热特性: 最大功率耗散为 48W,在 25°C 的环境温度下,确保在高负载下也能保持稳定工作。

  5. 快速开关响应: 该 MOSFET 对栅源电压变化响应迅速,适合快速开关操作,能够有效提高设备的动态性能。

结论

AON6262E 是一款极具竞争力的 N 沟道 MOSFET,凭借其优异的电气性能和可靠的工艺,适用于各种高效能应用。无论是在电源管理、电机驱动,还是在更广泛的功率控制和转换领域,该产品都能确保高效的电流传输,提供持续稳定的性能。对于希望提升产品效率和性能的设计工程师而言,AON6262E 是一个理想的选择。

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