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AOS AO4264E
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AO4264E
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO4264E
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.199g
- Electronic Component
- 1
- Electronic Component
- BM0257639623
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 1.1nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4264E 产品概述
一、基本信息
AO4264E是一款高性能N沟道场效应管（MOSFET），专为多种电子应用而设计。该器件以其优异的电气特性和可靠的工作性能，成为电源管理、电机控制及其他高效开关应用的理想选择。AO4264E的主要参数包括：漏源电压（Vdss）60V，连续漏极电流（Id）13.5A，漏源导通电阻（Rds(on)）为9.8mΩ（@13.5A, 10V），栅源极阈值电压为2.4V（@250μA），最大功率耗散为3.1W（Ta=25°C）。该器件采用流行的SOIC-8封装，便于在各种电路板上进行集成与布局。
二、主要特点
高耐压能力：AO4264E的漏源电压为60V，使其能够在多种中高压电源应用中稳定运行。对于需要较高电压的电路，AO4264E确保了设计的安全性与稳定性。
强大的电流承载能力：具有连续漏极电流13.5A的特性，AO4264E适合高电流电路应用，能够满足电动机驱动、LED照明驱动等场景的需求。
低导通电阻：9.8mΩ的导通电阻可显著减少功率损耗和热量产生，提高转换效率，为高效电源管理方案打下基础。这意味着在高负载情况下，AO4264E能够有效控制发热，延长设备的使用寿命。
宽工作温度范围和功率耗散能力：最大功率耗散3.1W（在25°C时），能够在相对宽广的温度范围内稳定工作，适应多种环境条件，并保证器件的可靠性。
门极驱动能力：栅源阈值电压2.4V（@250μA）意味着该MOSFET能够在低压驱动情况下迅速导通，提高开关速度，非常适合于开关电源、DC-DC转换器等高频应用。
三、应用领域
AO4264E广泛应用于各类电子产品和电路设计中，包括但不限于：
开关电源：由于其高效率和低损耗特性，AO4264E非常适用于AC/DC和DC/DC转换器，能够有效提高电源转换效率。
电动机控制：在电机驱动及控制应用中，AO4264E凭借其高电流能力和快速切换特性，能够确保电动机的快速响应与稳定控制。
LED驱动电路：在LED照明方案中，AO4264E能够高效驱动LED，降低能量消耗，同时保持良好的热管理特性。
消费电子产品：如手机充电器、电脑电源等低压高效切换电源，A4264E能够为这些产品提供优秀的电源解决方案。
四、结论
AO4264E作为一款优秀的N沟道MOSFET，结合了高电压、高电流能力以及低导通电阻等特点，是实现高效率电源设计的理想选择。它的广泛应用和可靠性能使其在现代电子电路设计中占据重要地位。在选择高性能场效应管时，AO4264E无疑是一个值得关注的优质产品，能够为不同应用提供高效、可靠的解决方案。
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