WMSIC Electronic Components

AOS AON6382

ModelAON6382
PackageDFN-8(5x6)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
AOS AON6382
Type
AOS
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON6382
Electronic Component
1
Package
DFN-8(5x6)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.204g
Electronic Component
1
Electronic Component
BM0000000186
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
50W
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON6382 产品概述

AON6382 是一款高性能的 N 沟道场效应管(MOSFET),具有出色的电气特性和热性能,特别适合高效能开关电源、直流-直流转换器以及电机驱动等应用。其主要参数包括漏源电压(Vdss)为 30V,连续漏极电流(Id)为 85A(在 25°C 环境下,Tc),漏源导通电阻(RDS(on))为仅 1.85mΩ(在 20A电流和 10V 栅源电压下),最大功率耗散为 50W(在环境温度 25°C 下),这些参数使得 AON6382 在各种功率配置中表现卓越。

关键参数

  1. 漏源电压(Vdss): AON6382 的漏源电压等级为 30V,意味着该元件能够承受最大 30V 的直流电压。这一特性使其非常适合较低电压的电源管理应用。

  2. 连续漏极电流(Id):该 MOSFET 在 25°C 温度下的连续漏极电流可达到 85A(Tc),这让其在热设计上更为灵活,适合高电流应用。设计工程师可以利用这一特性在高负载情况下确保电路稳定性。

  3. 栅源极阈值电压:栅源极阈值电压为 2.2V @ 250uA,意味着在低电压驱动下,MOSFET 可较早开启,并提高开关效率,降低功耗。

  4. 漏源导通电阻(RDS(on)):AON6382 的导通电阻低至 1.85mΩ(在 20A 和 10V 条件下的测量结果),这对于减少开关损耗和热损耗至关重要,适合高效能电源线路设计。

  5. 最大功率耗散:最大功率耗散为 50W(在环境温度 25°C 时),允许设计者在规划电路时更加灵活,满足高功率应用的需求。

封装类型

AON6382 采用 DFN-8 封装,尺寸为 5.2x5.9mm,具有优良的散热性能和优化的电流路径。该封装设计便于紧凑型电路板布局,同时高效的热传导能有效降低芯片温升,延长元件的使用寿命。

应用场景

AON6382 的设计使其非常适合多种应用场景,包括:

  • 电源管理:广泛应用于开关电源、适配器和电源转换器等设计中,能够确保电源的高效率和稳定性。
  • DC-DC 转换器:尤其适合用于汽车和消费电子产品中的 DC-DC 转换器,能够满足高电流输出的需求。
  • 电机驱动:在电机控制系统中,AON6382 可以作为开关元件,保证电机的高效控制,减少功率损耗。
  • LED 驱动:利用其低导通电阻特性,能够有效驱动高功率 LED 光源,应用于照明和显示领域。

总结

总体而言,AON6382 是一款具备高性能和高适用性的 N 沟道 MOSFET,凭借其优秀的电性能和散热特性,使其在现代电源管理和高效能电路设计中扮演不可或缺的角色。无论是在工业、汽车还是消费电子领域,AON6382 都能够带来显著的性能提升,为用户提供更高的安全性和可靠性。

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