WMSIC Electronic Components

AOS AON2409

ModelAON2409
PackageDFN-6(2x2)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
AOS AON2409
Type
AOS
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON2409
Electronic Component
1
Package
DFN-6(2x2)
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.042g
Electronic Component
1
Electronic Component
BM0258716665
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.8W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
530pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON2409 产品概述

一、产品简介

AON2409 是 AOS 提供的一款单一 P 沟道功率 MOSFET,耐压等级 30V,适用于低压电源和高侧开关场合。器件以 DFN-6 (2×2 mm) 小外形封装提供,适合高密度 PCB 布局与便携设备应用。

二、主要电气参数

  • 类型:P 沟道 MOSFET(数量:1)
  • 漏源电压 Vdss:30V
  • 连续漏极电流 Id:8A
  • 导通电阻 RDS(on):53 mΩ(在 VGS = -4.5V 条件下)
  • 耗散功率 Pd:2.8W(参考值,依散热条件变化)
  • 阈值电压 Vgs(th):1.1V
  • 总栅极电荷 Qg:12 nC(@10V)
  • 输入电容 Ciss:530 pF;反向传输电容 Crss:75 pF;输出电容 Coss:114 pF
  • 工作温度范围:-55°C 至 +150°C

三、封装与物理特性

  • 封装:DFN-6 (2×2 mm)(适合自动贴装)
  • 品牌:AOS
    小型化封装有利于减小寄生电感,能在紧凑布局中实现较好的开关性能,但对 PCB 散热要求较高。

四、典型应用场景

  • 低压(<30V)高侧开关与负载断接
  • 电池保护、电源管理与充放电开关
  • 便携式设备、便携充电器、通信设备的功率路径控制
  • 需要小体积、较低导通损耗的开关场合

五、设计与热管理建议

  • 为实现标称 RDS(on),栅极驱动需达到约 -4.5V(相对于源极),注意驱动电压极性与门极驱动电路兼容性。
  • 器件 Pd 为 2.8W,实际可耗散功率受 PCB 铜箔面积与环境温度影响,建议使用较大散热铜箔并在需要时采用过孔与底层散热层。
  • 对于快速开关场合,考虑输出/反向电容与栅极电荷带来的开关损耗;合适的栅极串阻、RC 缓冲或吸收网络可抑制振铃与尖峰。
  • 驱动线路短且阻抗可控,减小寄生电感与电阻,以降低瞬态应力。

六、布局与防护要点

  • 将源极/漏极大面积铜箔布置于封装下方以提高散热;必要时使用过孔连接底层散热平面。
  • 对感性负载使用 TVS 或 RC 吸收器抑制尖峰,保护 MOSFET 免受瞬态过压。
  • 在门极可并联适当电阻(如 10–100 Ω,根据开关速度需求调整),并在需要时添加栅极钳位/移位电路以防误触发。

七、注意事项

  • 器件为 P 沟道,栅极电压符号通常以相对于源极表述(驱动逻辑需反相于 N 沟道)。
  • 器件参数为典型/参考值,具体工程应用时应参考厂商完整数据手册并在目标板级环境中进行热和电气验证。

AON2409 在小封装下兼顾了较低导通电阻与适度电流能力,适合对体积和开关性能有要求的中低压功率路径控制应用。

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