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AOS AONS21357
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AONS21357
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AONS21357
- Electronic Component
- 1
- Package
- TDSON-8-EP(5x6)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.198g
- Electronic Component
- 1
- Electronic Component
- BM0040807995
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 2.83nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AONS21357 产品概述
概述
AONS21357是一款高性能P沟道金属氧化物半导体场效应管（MOSFET），采用先进的半导体材料和工艺制造。具有出色的导通电阻、功率处理能力和工作温度范围，其设计旨在满足多种应用需求，这使得它成为广泛的电子设备中不可或缺的重要元件。
产品参数
基本参数
- 安装类型: 表面贴装型，适合自动化贴片工艺，显著提高了生产效率。
- 驱动电压: 支持4.5V和10V的栅极驱动电压，和最大±25V的栅源电压，具有良好的兼容性。
- 最大导通电阻: 在20A和10V条件下，导通电阻为7.8毫欧，确保了最佳的能量效率和热性能。
电流和功率规格
- 最大连续漏极电流 (Id): 它能支持高达21A（环境温度Ta）和36A（结温Tc）的漏电流，适合高负载应用。
- 功率耗散: 在环境温度下能够承受5W的功率耗散，而在结温条件下则可承受高达48W，展示出其出色的热管理能力。
电容参数
- 输入电容 (Ciss): 在15V下的输入电容最大值为2830pF，表明其在开关应用中的高效性能，有助于实现快速开关和高频操作。
- 栅极电荷 (Qg): @10V时的栅极电荷为70nC，优化了开关速度与驱动电流需求。
阈值电压
- Vgs(th): 最大阈值电压为2.3V（@250µA），确保在较低驱动电压下也能实现优良的开关特性。
工作温度范围
- AONS21357的工作温度范围为-55°C 至 150°C（结温TJ），为高温环境下的可靠运行提供了保障。
封装类型
- 此款MOSFET采用8-DFN-EP(5x6)封装，有助于节约空间，适合高度集成的电路设计。
应用场景
AONS21357 MOSFET广泛应用于各种电子电路和系统中，包括但不限于：
- 电源管理: 在DC-DC转换器、开关电源等应用中，因其出色的导通电阻和热性能，能够提高效率并减少能量损耗。
- 驱动电路: 常用于电机驱动、LED驱动等需要快速开关和高效工作的控制电路。
- 通信设备: 适用于无线通信设备中，对开关速度和功率效率有较高要求的应用。
- 汽车电子: 由于其宽广的工作温度范围，AONS21357也非常适合用于需要可靠性的汽车电子系统中，如电子控制单元（ECU）和更高功率的电路。
结论
总而言之，AONS21357是一款在电源管理、驱动电路、电信和汽车电子等领域具备广泛应用前景的高性能P沟道MOSFET。凭借其优良的电气特性和高功率处理能力，用户可以充分利用其在高效率和高可靠性需求下的优势，为现代电子设计提供强有力的支持。
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