WMSIC Electronic Components

AOS AON7380

ModelAON7380
PackageDFN-8(3x3)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Availability on request

Technical data

Product details

20 specifications

Core information

Product name
AOS AON7380
Type
AOS
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AON7380
Electronic Component
1
Package
DFN-8(3x3)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.053g
Electronic Component
1
Electronic Component
BM0000285106
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
4.1W;24W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON7380 产品概述

概览

AON7380 是一款高性能的N沟道MOSFET,封装为DFN-8 (3x3 mm),其设计旨在提供卓越的电流处理能力和导通性能。该器件的漏源电压(Vdss)最高可达30V,能够支持高达24A的连续漏极电流(Id)在标准的25°C环境下运行。这使得AON7380非常适用于各类功率管理和电源转换应用,包括开关电源(SMPS)、电机驱动和DC-DC转换器等。

关键参数

  1. 漏源电压(Vdss): AON7380的Vdss达到30V,保证了其在高压环境下的可靠性。此特性使其适用于许多消费电子和工业设备。

  2. 连续漏极电流(Id): 在25°C的操作条件下,AON7380能够持续承受24A的漏极电流,确保其在高负载情况下的稳定工作。需要指出的是,这一参数对于设计师而言非常重要,因为它影响着电源的有效功率输出和整体性能。

  3. 栅源极阈值电压: AON7380的栅源极阈值电压为2.2V @ 250μA,具有低阈值特性,能够在较低的栅极驱动电压下迅速导通,提升开关速度并减少开关损耗。这种特性使得它能够在低电压条件下有效工作,增强整体系统的能效。

  4. 漏源导通电阻: 在20A和10V的条件下,漏源导通电阻仅为6.8mΩ,表示在高负载情况下损耗也极低,从而提高了能量的转换效率。这一重要参数有助于降低MOSFET在高电流状态下的温升,减少散热需求。

  5. 最大功率耗散: 在环境温度为25°C时,AON7380的最大功率耗散能力为4.1W,使得它在高功率应用中表现出色。其结构设计有效提升了热管理性能,降低了热失效的风险。

应用场景

AON7380被广泛用于多种应用场景,其中包括但不限于:

  • 开关电源(SMPS):其高Vdss和低Rds(on)特性使得AON7380在开关电源设计中应用广泛,可以提升电源的效率和稳定性。

  • 电机驱动:高电流承载能力使其成为电动机控制系统的重要组成部分,确保其在启动和运行过程中的电子开关性能。

  • DC-DC转换器:在转换器拓扑中,AON7380能够有效降低转换损耗,增加转换效率,适用于各类便携式和嵌入式设备。

  • 电源管理应用:在高效能电源管理应用中,它的低导通电阻和紧致封装有助于进一步优化空间使用和散热性能。

总结

综上所述,AON7380 N沟道MOSFET以其优异的电气性能、紧凑的封装和可靠的工作性能在广泛的应用领域中具备明显的竞争优势。其适用于高负载和高频率的应用场景,将为电子设计工程师提供更高的灵活性与效率。在当今电子产品日益追求效能和小型化的环境下,AON7380作为一种理想的电器元件,必定能够满足不断提高的市场需求。

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