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AOS AO6402A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AO6402A
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO6402A
- Electronic Component
- 1
- Package
- TSOP-6
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM0000003484
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 373pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO6402A 产品概述
概述
AO6402A是一款高性能的N沟道场效应管（MOSFET），专为高效能开关和线性应用而设计。该器件具有优越的电气特性和相对较小的封装尺寸，适合于各种电子设备中使用，特别是在电源管理、功率转换和射频应用等领域。AO6402A的额定参数包括漏源电压（Vdss）为30V、连续漏极电流（Id）为7.5A，漏源导通电阻为24mΩ，这使得它在低功耗和高效率的电路设计中，能够有效降低功率损耗，提高系统的整体性能。
主要参数
漏源电压（Vdss）: AO6402A的最大漏源电压为30V，这使其能够在较高电压应用中稳定工作，广泛适用于直流/DC-DC转换器、马达驱动和其他高压应用。
连续漏极电流（Id）: 在25°C的环境温度下，AO6402A支持高达7.5A的连续漏极电流，能够满足多种负载条件下的需求，适合在高大功率的应用中表现出色。
栅源极阈值电压: AO6402A的栅源极阈值电压为2.6V @ 250μA，这使得其在低电压驱动的情况下也可以实现开关功能，方便与微控制器及其他数字电路的集成。
漏源导通电阻: 其漏源导通电阻为24mΩ（在7.5A和10V时），这一参数的低值关键在于减少能量损耗，提高效率，是实现高效能电源管理和热管理设计的关键。
最大功率耗散（Ta=25°C）: AO6402A的最大功率耗散为2W，能够在温度较高的环境中依然保持稳定工作，确保器件的可靠性。
封装与应用
AO6402A采用TSOP-6封装，尺寸为1.5mm，具有小巧、轻便的特点，特别适合于空间受限的应用场合，例如移动设备和嵌入式系统。由于其优异的电气性能和小型化设计，AO6402A被广泛应用于如下领域：
- 电源管理: 包括DC-DC转换器和线性调节器等，能够显著提高转换效率，降低发热。
- 马达驱动: 应用于直流电机和无刷电机驱动中，提升电机驱动的响应速度和效率。
- 通信设备: 用于射频（RF）放大器和信号调理电路，帮助提升信号的强度与清晰度。
- 消费电子产品: 适用于智能手机、平板电脑、笔记本电脑等设备的电源开关管理。
结论
AO6402A是一款极具竞争力的N沟道MOSFET，结合其优异的电气特性与紧凑的封装设计，为现代电子产品和应用提供了可靠的解决方案。它适用于多种工业和消费类电子设备，帮助设计工程师满足日益增长的功耗和效能要求。因此，AO6402A不仅是高效率电源管理的理想选择，也是推动下一代电子设备发展的关键元器件之一。
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