WMSIC Electronic Components

AOS AO8820

ModelAO8820
PackageTSSOP-8
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
AOS AO8820
Type
AOS
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AO8820
Electronic Component
1
Package
TSSOP-8
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.156g
Electronic Component
1
Electronic Component
BM0222748613
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
500pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO8820 产品概述

AO8820是一款高性能双N沟道场效应晶体管(MOSFET),专为需要高效率和高电流处理能力的应用场景而设计。该器件在封装规格方面采用TSSOP-8封装,其小巧的尺寸非常适合空间有限的电子设计。这款MOSFET的主要特点包括其针对低导通电阻(R_DS(on))、高漏源电压(V_DSS)和较大的漏极电流(I_D)能力,成为了许多电子系统中的理想选择。

主要技术参数

  1. 漏源电压 (V_DSS): 该器件的漏源电压为20V,确保了其在多种电压条件下的安全操作,这使得其广泛应用于低至中等电压的功率转换及放大电路中。

  2. 连续漏极电流 (I_D): 在25℃的环境温度下,AO8820能够承受高达7A的连续漏极电流。这样的能力使其适合用于驱动高电流负载的应用,如电机驱动、开关电源以及其他高功率需求的电路。

  3. 栅源极阈值电压 (V_GS(th)): AO8820的栅源阈值电压为1.1V(在250µA条件下),这意味着该器件可以在较低的栅电压下稳定开启,进一步提高了电路的设计灵活性。

  4. 漏源导通电阻 (R_DS(on)): 在7A和10V的条件下,其导通电阻仅为21mΩ,降低了开关损耗,提升了整体系统效率。这使得AO8820在高频率应用中表现优异,尤其对于电源管理和DC-DC转换器尤为重要。

  5. 最大功率耗散 (P_D): 该器件在25℃环境下的最大功率耗散为1.5W,提供了良好的热管理能力。这对确保器件的长期稳定操作及可靠性至关重要。

应用领域

AO8820的广泛应用于多个领域,以下是一些典型应用场景:

  1. 开关电源: 由于其高效率和低导通电阻,AO8820被广泛用于开关电源,实现高效电力转换和管理。

  2. 电动机驱动: 在电机驱动应用中,AO8820的高漏极电流能力和快速开关特性,使其成为高效电机控制系统的理想选择。

  3. LED驱动: AO8820适用于LED驱动电路,能确保稳定的电流输出,提升LED的整体性能。

  4. DC-DC转换器: AO8820的低导通电阻和适中的功率处理能力使其成为各种DC-DC转换器的关键组件,增强了系统的效率。

  5. 无线充电: 在无线充电器中,AO8820作为交换元件,可以有效提高系统的充电效率和功率输出。

总结

总体而言,AO8820是一款性能强大的双N沟道MOSFET,其在各个维度的优良特性使其适合用于多种电子设备和电路设计中。无论是在高电流应用还是对空间要求严格的设计中,AO8820均能提供稳定、可靠的性能,成为工程师们设计电源管理解决方案时的优秀选择。其出色的参数使得它在现代电子设备中广泛应用,适应了行业发展的需求,展现了其在未来电子技术不断演变中的重要角色。

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