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AOS AOD2922
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AOD2922
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AOD2922
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.483g
- Electronic Component
- 1
- Electronic Component
- BM0000279224
- Power Dissipation(Pd)
- 17W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOD2922 产品概述
产品概述
AOD2922是一款高性能N沟道金属氧化物半导体场效应管（MOSFET），采用TO-252封装，专为要求较高的电源管理和开关应用而设计。其漏源电压（Vdss）高达100V，使其适用于多种高电压电路，同时具备优秀的连续漏极电流（Id）性能，额定值为3.5A，使得其在各种应用场合中表现出色。此外，该MOSFET的设计满足了现代电子产品对效率和功率密度的严格要求。
主要参数
漏源电压（Vdss）: 100V
AOD2922能够承受高达100V的漏源电压，这一特性使得它在高压电源转换器、驱动电路以及各种高电压应用中得以广泛使用。连续漏极电流（Id）: 3.5A (在25°C时)
AOD2922在常温下的连续漏极电流达到3.5A，足以支持低到中功率的负载，确保设备长期稳定工作并降低发热。栅源极阈值电压: 2.7V @ 250μA
该MOSFET显示出较低的栅源极阈值电压，这允许在较低电压下开启，有助于降低驱动损耗，适用于PWM控制等高频操作场合。漏源导通电阻: 140mΩ @ 5A, 10V
AOD2922在工作时表现出较低的导通电阻，这使得在导通时通过的电流损耗减至最低，从而提高了整体效能，尤其适合高频开关电源和电机驱动等应用。最大功率耗散: 5W (Ta=25°C)
AOD2922具有较高的功率处理能力，其最大功率耗散在常温下为5W，意味着在高功率应用时能够以相对较小的体积实现高效散热。
应用领域
AOD2922广泛应用于多个领域，包括但不限于：
开关电源
由于其高效的导通性能和较低的开关损耗，AOD2922非常适合用于各种开关电源的输出阶段。电机驱动
在电机驱动电路中，AOD2922的高压耐受能力和低导通电阻使其成为理想选择，能够提高电机控制系统的响应速度和效率。高频PWM控制
优秀的切换特性使得该MOSFET可以在高频脉宽调制（PWM）控制应用中实现更佳的性能，适合于LED驱动、交流电机调速等。DC-DC转换器
由于其在不同负载条件下的稳定性及出色的热管理特性，AOD2922可被用于降压或升压DC-DC转换器中，提升转换效率并降低系统热量。
总结
总之，AOD2922凭借其卓越的电气性能及多功能应用能力，是现代电子设计中不可或缺的高效N沟道MOSFET。无论是在消费电子、工业控制，还是在电源管理等方面，AOD2922都能够提供可靠的解决方案，满足设计工程师在推出新产品时对性能和效率的高期望。随着电子技术的不断进步，对更高效、更小型化元器件的需求将日益增长，AOD2922定将发挥其重要的作用。
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