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AOS AON3818
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AON3818
- Type
- AOS
- Minimum package
- 5000
Technical parameters
- Electronic Component
- AOS
- Electronic Component
- AON3818
- Electronic Component
- 1
- Package
- DFN3x3-8L
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.045g
- Electronic Component
- 1
- Electronic Component
- BM0263433056
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.7W
- Electronic Component
- 5000
- Voltage(Vdss)
- 24V
- Capacitor(Ciss)
- 840pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AON3818 产品概述
一、产品简介
AON3818 是 AOS 推出的双通道 N 沟道场效应管，封装为 DFN3x3-8L，两个晶体管为“共漏”（Drain 共联）配置。器件额定漏源电压 Vdss 为 24V，单通道连续漏极电流 Id 为 8A，适合中低压、高电流的便携与板载电源管理场景。
二、主要电气参数
- Vdss：24V
- 连续漏极电流 Id：8A（单通道）
- 导通电阻 RDS(on)：21mΩ @ Vgs=2.5V
- 耗散功率 Pd：2.7W（无额外散热）
- 阈值电压 Vgs(th)：典型 1.2V
- 总栅极电荷 Qg：15nC @ 4.5V
- 输入电容 Ciss：840pF；输出电容 Coss：210pF；反向传输电容 Crss：205pF
三、封装与热性能
DFN3x3-8L 小型封装有利于 PCB 面积节省，但器件 Pd=2.7W 为无额外散热条件下的功耗，实际应用中需通过底部散热垫和多孔热 vias 将热量传导至大面积铜箔以降低结温，确保长期可靠性。工作温度范围为 -55℃ ~ +150℃。
四、应用场景
适用于便携设备电源路径开关、负载开关、电池保护与电源管理、电机驱动的低压分支、同步整流与电流旁路等场合。较低的 RDS(on) 与中等 Qg 使其在低压直流开关与开关转换中效率较高，适合 2 节锂电池系统或 24V 以下的DC电源模块。
五、使用建议与布局要点
- 门极驱动：2.5V 可获得低 RDS(on)，若用于高速开关建议使用 4.5V 门极驱动以缩短开关时间，但会增加栅极损耗。
- PCB 布局：门、源引线尽量短，采用独立回流平面；底部热垫并配多孔热 vias。
- 去耦与抑振：开关回路加足够的输入输出去耦电容，门极加阻尼电阻以抑制振铃与电磁干扰。
- 并联与保护：若需更高电流，可并联（注意匹配热阻与分流）；在高 dv/dt 环境下注意 Crss 导致的误触发，必要时并联栅-源电阻或使用栅极驱动器带 Miller 抑制。
六、选型与注意事项
AON3818 在尺寸与性能之间取得平衡，适合对 PCB 面积与功耗有要求的中低压功率开关。选型时注意热设计能力与栅驱电压匹配，以及共漏结构对电路拓扑的限制（Drain 共联会影响某些半桥或串联方案的实现）。
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