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AOS AO4813
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AO4813
- Type
- AOS
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO4813
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- 2 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.201g
- Electronic Component
- 1
- Electronic Component
- BM0000860515
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.25nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4813 产品概述
引言
AO4813 是一款高性能的 P 沟道场效应管（MOSFET），其设计旨在提供出色的电气性能，适合在各种电子应用中使用。作为一款双管结构的 MOSFET，AO4813 具有低导通电阻和宽工作温度范围，使其在功率管理和开关应用中表现优异。
基本参数
AO4813 采用表面贴装型封装（SO-8），其引脚布局便于在高密度 PCB 中焊接，对空间要求较高的应用尤为适合。该器件的连续漏极电流（Id）为 7.1A，最大漏源电压（Vdss）可达 30V，结合其最大功率额定值2W，使其能够满足多种应用的需求。
导通电阻与输入电容
AO4813 具有 excellent 导通电阻性能，在 7.1A 和 10V 条件下，最大导通电阻仅为 25 毫欧，这意味着在驱动较高电流时，器件的能量损耗非常低，可以有效提高系统的整体效率。此外，在 15V 的工作条件下，其输入电容（Ciss）最大值为 1250pF，确保了快速的开关响应，适用于高速开关电路。
栅极电荷与阈值电压
关于栅极控制，AO4813 的栅极电荷（Qg）在 10V 时的最大值为 19nC，确保合理的开关效率。其阈值电压（Vgs(th)）在 250µA 条件下的最大值为 2.5V，这使得该 MOSFET 能够在逻辑电平下轻松开启，适应现代逻辑电平驱动的需求。
工作温度
AO4813 的工作温度范围为 -55°C 到 150°C，保证在极端环境下的可靠运行。这一特性使得其非常适合用于汽车电子、工业设备以及航空航天等对温度稳定性有高要求的领域。
应用场景
由于其低导通电阻以及较高的电流承载能力，AO4813 被广泛应用于：
- DC-DC 转换器
- 电机驱动电路
- 开关电源
- 照明控制
- 电池管理系统
- 各类电源管理应用
总结
AO4813 是一款性能卓越的 P 沟道 MOSFET，凭借其出色的电气特性和宽广的应用范围，它成为设计师在电源管理和开关控制领域中的得力助手。无论是高效的电能转换，还是可靠的信号处理，AO4813 均能提供优异的性能和稳定的工作特性。对于需要高效能和小型化设计的电子项目，AO4813 是一个值得考虑的理想选择。
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