WMSIC Electronic Components

AOS AOZ5332QI

ModelAOZ5332QI
PackageQFN-31(5x5)
BrandAOS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
AOS AOZ5332QI
Type
AOS
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
AOS
Electronic Component
AOZ5332QI
Electronic Component
1
Electronic Component
5mm
Package
QFN-31(5x5)
Type
MOSFET
Electronic Component
Intelligent Power Module (IPM)
Electronic Component
0.425g
Electronic Component
5mm
Electronic Component
1
Electronic Component
BM0265132845
Operating Temperature
40℃~+125℃
Operating Voltage
4.5V~5.5V
Switching Frequency
2MHz
Static Current(Iq)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AOZ5332QI 产品概述

一、产品简介

AOZ5332QI 是 AOS 推出的一款高性能功率 MOSFET,采用 QFN-31 (5×5 mm) 小封装,面向高密度电源和开关应用。器件支持 4.5V 至 5.5V 的驱动电压范围,能够在典型工作条件下实现 50A 连续漏极电流,开关频率可达 2MHz,静态电流低至 1µA,工作温度范围为 -40℃ 到 +125℃。产品集成过温保护(带迟滞)、欠压锁定(带迟滞)与使能(EN)功能,便于系统级安全管理与故障响应。

二、主要特性

  • 连续漏极电流(Id):50A(典型工作条件下)
  • 驱动/工作电压:4.5V~5.5V
  • 开关频率:最高可达 2MHz,适合高频开关电源设计
  • 静态电流(Iq):1µA,适合低待机功耗系统
  • 温度范围:-40℃ 至 +125℃
  • 集成功能:过温保护(带迟滞)、欠压锁定(带迟滞)、使能引脚(EN)
  • 封装:QFN-31 (5×5 mm),利于热管理与 PCB 面积节省

三、电气与热特性概述

AOZ5332QI 在高电流密度下仍保持可靠的导通能力,低漏阻设计适合需要高效率与低 conduction loss 的应用场景。QFN-31 封装提供良好的散热路径,但在 50A 等高电流工况下仍需通过合理的 PCB 散热设计——例如增加散热层、扩展底板焊盘和多层铜过孔——以保证器件结温在安全范围内。

四、功能保护说明

  • 过温保护(带迟滞):当器件温度超过阈值时自动限流或关断,温度降至恢复阈值后自动恢复,避免频繁抖动。
  • 欠压锁定(带迟滞):在驱动电压不足时防止误导通,有利于在上电/断电时保护负载及系统。
  • 使能(EN)引脚:提供外部逻辑控制能力,可实现快速软件或硬件关断与唤醒。

五、典型应用

  • 同步降压(buck)转换器的输出级开关
  • 多相 VRM、CPU/GPU 供电开关阵列
  • 高性能 DC-DC 电源模块与电源管理单元
  • 汽车电子与工业控制中需高温与高电流的场合(遵循温度等级)

六、PCB 布局与可靠性建议

  • 在 QFN 底部增加大面积散热焊盘并通过多个热过孔连接内层散热层。
  • 走宽电源与地铜箔,减少寄生电感;高速开关时注意退耦电容靠近器件布局。
  • 使能与保护信号走线尽量短且远离高速开关节点,避免误触发。
  • 评估热关断与欠压恢复行为在系统级的影响,必要时在上位控制器中加入软启动或降额逻辑。

七、选型与注意事项

在设计前应结合实际工作电流、开关损耗与散热能力进行热仿真与板级验证。对于要求极低导通损耗或更高电流裕量的场合,需同时考虑并联、多相或更大封装方案。EN 与保护阈值在系统设计中应预留校准与调试空间。

八、总结

AOZ5332QI 以紧凑的 QFN-31 封装、50A 的连续电流能力与集成保护功能,适合高密度电源和要求可靠性与低静态功耗的场景。合理的 PCB 热设计与对保护特性的系统级配合,可充分发挥其在高频、高效开关应用中的优势。若需进一步电气参数(如 Rds(on)、门极电荷等)或参考设计,请咨询 AOS 官方资料以获取完整器件手册。

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