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AOS AOD11S60
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AOD11S60
- Type
- AOS
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AOD11S60
- Electronic Component
- 1
- Package
- TO-252(DPAK)
- Electronic Component
- MOSFET
- Electronic Component
- 0.437g
- Electronic Component
- 1
- Electronic Component
- BM69419202
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 600V
- Capacitor(Ciss)
- 545pF
- Gate (Qg)
- 11nC@10V
- Resistor(RDS(on))
- 399mΩ@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOD11S60 产品概述
一、产品简介
AOS AOD11S60 是一款高性能的N沟道MOSFET，具有优异的电流承载能力和高耐压特性，特别适合各种电源管理和开关转换应用。该器件的最大漏极电压为600V，连续漏极电流达到11A，功率耗散能力高达208W，非常适合需求较高的电力电子应用，如电源适配器、电机驱动和开关电源（SMPS）等。
二、技术规格
AOD11S60的主要技术参数如下：
- 安装类型: 表面贴装型
- 最大导通电阻 (Rds On): 399毫欧 @ 3.8A，10V
- 泄漏电流 (Id): 11A（Tc）
- Vds（漏源电压）: 600V
- Vgs（栅源电压）: ±30V
- 输入电容 (Ciss): 545pF @ 100V
- 栅极电荷 (Qg): 11nC @ 10V
- Vgs(th)（阈值电压）: 4.1V @ 250µA
- 最大功率耗散: 208W（Tc）
- 工作温度范围: -55°C ~ 150°C
三、应用领域
AOD11S60特别适合以下应用场合：
开关电源: 由于其高抗压能力和低导通电阻，该MOSFET能够有效处理高频开关波形，减小能量损失，提高系统效率。
电机驱动: 该器件可用于驱动直流无刷电机和步进电机，提供稳定的电流输出，确保电机平稳运行。
电源适配器: AOD11S60具有较大的功率耗散能力，使其非常适合用于供电设备中的高效开关电路设计。
LED驱动: 其优异的开关特性也使其成为LED驱动电路的理想选择，能够实现快速开关和精确调节。
电动汽车和可再生能源系统: 随着电动汽车和可再生能源技术的发展，该器件在功率转换和能量管理系统中的应用也日益增加。
四、产品优势
高耐压性能: 600V的耐压特性使得AOD11S60能够满足高电压的工作需求，拓宽了其应用范围。
低导通电阻: 399毫欧的低Rds On值意味着该MOSFET在导通时损耗极低，能够有效提高系统的整体能效。
宽工作温度范围: -55°C至150°C的广泛工作温度适应性确保了该器件可在各种恶劣条件下稳定工作。
紧凑封装: TO-252封装设计，便于表面贴装，适合高密度电路板的布局要求。
五、总结
综合来看，AOD11S60作为一款高效率、高可靠性的N沟道MOSFET，凭借其600V高抗压、11A的承载能力及208W的功耗处理能力，使其在各种电力电子和开关应用中展现出较强的竞争力。其应用范围广泛，能够满足现代电子设备对高性能元器件日益增长的需求。AOD11S60不仅具有优良的电气性能，还提供可靠的工作环境适应性，是工程师们在电源设计和管理方面的优秀选择。
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