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AOS AO4266E
Configuration
1 options
Configuration
Date code within 2 years
Availability on request
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AO4266E
- Type
- AOS
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AO4266E
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.214g
- Electronic Component
- 1
- Electronic Component
- BM0000279020
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 755pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：AO4266E MOSFET
一、产品简介
AO4266E是一款高效的N沟道场效应管（MOSFET），具备强大的电流处理能力与高伏特耐压，适用于各种功率电子应用。封装形式为SOIC-8L，便于直接表面贴装，适合高密度集成电路设计。该MOSFET的最大漏极电流可达11A，耐压可达60V，提供卓越的性能与可靠性。
二、主要规格
- 类型：N沟道MOSFET
- 额定功率：3.1W
- 最大漏极电压（Vds）：60V
- 最大漏极电流（Id）：11A
- 封装：SOIC-8L
- 导通电阻（Rds(on)）：低于某一特定值，以提升效率和降低发热
- 工作温度范围：-55℃至+150℃
三、产品特性
- 高效能：AO4266E具备较低的导通电阻 (Rds(on))，使其在开关频率较高的应用中展现出卓越的热管理特性，减少能量损失，提升整体电路效率。
- 温度稳定性：产品设计考虑了宽广的工作温度范围，在各种环境条件下均表现出色，确保装置长期稳定运行。
- 抗干扰能力：AO4266E具有良好的耐压特性，能有效抑制电磁干扰（EMI），保护后级电路安全稳定运行。
- 小型化设计：SOIC-8L封装，使得AO4266E在电路设计的时候便于布局，且符合现代电子设备追求的小型化趋势，适用于空间有限的应用。
四、应用场景
AO4266E广泛应用于多个领域，包括但不限于：
- 开关电源：在DC-DC变换器中充当主开关元件，适用于各种消费电子、工业设备等，为电源模块提供高效能级别转换。
- 电机驱动：用于直流电机或步进电机控制电路中，能够在需要快速响应与高电流时提供稳定的输出。
- LED驱动：在LED照明模块中，作为开关元件，提升电源利用率与亮度控制。
- 电池管理系统：用于电池充放电控制，确保电池的安全性与高效性。
五、总结
AO4266E是一款出色的N沟道MOSFET，以其高性能和灵活的应用能力，成为电力电子设计领域中的首选元器件。无论是在复杂的电源管理系统，还是在诸多工业控制应用中，AO4266E都能展现出其可靠性和优越的电气特性。选择AO4266E，不仅可以提高设计效率，还能有效提升产品的综合性能，助力您的项目实现更高的技术标准与经济效益。
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