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AOS AOD417
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AOD417
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AOD417
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.483g
- Electronic Component
- 1
- Electronic Component
- BM0000279425
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 50W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：AOD417 P沟道MOSFET
一、产品简介
AOD417是一款高性能的P沟道场效应管（MOSFET），其主要应用在电源管理、负载开关和功率转换电路中。作为AOS品牌的产品，AOD417凭借其优异的电气性能和稳定的工作特性，广泛应用于各种电子设备和工业应用场景。
二、基本参数
- 漏源电压（Vdss）: 30V
- 连续漏极电流（Id）: 25A @ 25°C
- 栅源极阈值电压（Vgs(th)）: 3V @ 250μA
- 漏源导通电阻（Rds(on)）: 34mΩ @ 20A, 10V
- 最大功率耗散（Pd）: 2.5W @ Ta=25°C
- 封装类型: TO-252 (DPAK)
- 工作温度范围: 适用于工业级温度
三、电气性能
AOD417的漏源电压达到30V，能够满足大多数低压电源应用的需求。其连续漏极电流高达25A，意味着在正常工作条件下，AOD417能够支持较大的负载电流，适合用于电源开关及其他高电流需求的场合。
该MOSFET的门源阈值电压为3V，这一参数使其在驱动时易于控制，特别适用于低电压逻辑电平驱动的电路。漏源导通电阻仅为34mΩ，这一特性大大降低了在工作中的功耗和热量，有助于提高整体系统的效率。
四、封装与散热特性
AOD417采用TO-252（DPAK）封装，具有良好的散热性能和机械强度，适合在要求较高的应用环境中使用。该封装设计有助于降低工作温度，减少元件的过热风险，有利于延长设备的使用寿命。
最大功率耗散为2.5W，意味着在适当的散热条件下，该MOSFET能够适应多个应用场景，包括开关电源、LED驱动器、逆变器和电机控制等。
五、应用领域
AOD417的优异特性使其在多个应用领域表现出色。具体应用包括但不限于：
- 电源管理: 在各种电源转换和管理系统中，AOD417能够用于DC-DC转换器、开关电源等。
- 负载开关: 在需要控制大功率负载的系统中，如快速切换电源的电路。
- 电机驱动: 在电动机控制电路中，AOD417能够提供高效率的开关性能。
- 通信设备: 适用于需要电源切换和管理的通信设备。
六、总结
AOD417是一款性能卓越的P沟道MOSFET，凭借其较高的电压和电流额定值、低导通电阻以及良好的热管理特性，适合广泛的电子应用。无论是在电源管理，还是在负载开关等诸多领域，其卓越的性能表现都将为设计师提供极大的灵活性与可靠性。选择AOD417，意味着选择一款值得信赖的高效能元器件，以确保您的产品具备更强的市场竞争力。
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