WMSIC Electronic Components

Brightking UDD32C12L01

ModelUDD32C12L01
PackageSOD-323
BrandBrightking
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Brightking UDD32C12L01
Type
BRIGHTKING
Minimum package
3000

Technical parameters

Electronic Component
Brightking
Electronic Component
UDD32C12L01
Electronic Component
1
Package
SOD-323
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.02g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.8pF
Electronic Component
BM0232169536
Voltage
28.6V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
1uA
Voltage(VBR)
13.3V
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

UDD32C12L01 产品概述

一、产品简介

UDD32C12L01 是 Brightking(台湾君耀)推出的一款单路低电容 ESD 抑制二极管,采用小型 SOD-323 封装,专为对敏感信号线和低电压电源线提供静电与浪涌防护而设计。该器件通过 IEC 61000-4-2(静电放电)、IEC 61000-4-4(脉冲群)和 IEC 61000-4-5(浪涌)等抗扰度等级认证,适合现代消费电子、小型通信设备和接口模块的过压保护需求。

二、主要电气参数

  • 类型:ESD 抑制二极管(单路)
  • 反向截止电压 Vrwm:12 V(工作反向耐压)
  • 击穿电压 Vbr:约 13.3 V
  • 峰值脉冲电流 Ipp:5 A(典型测试条件下)
  • 钳位电压 Vc:约 28.6 V(在 Ipp=5 A 时)
  • 反向电流 Ir:约 1 μA(常温下)
  • 结电容 Cj:约 0.8 pF(低电容,适合高速信号线)
  • 通道数:单路
  • 封装:SOD-323(SMD)
  • 品牌:Brightking(台湾君耀)

三、关键特性与优势

  • 高抗扰度:符合 IEC 61000-4-2/4-4/4-5 标准,可有效应对静电和短时浪涌冲击。
  • 低钳位:在规定峰值脉冲电流下,钳位电压控制在约 28.6 V,能够在保护被保护节点的同时限制过压幅度。
  • 低结电容:约 0.8 pF 的结电容对高速数据线(如 USB、LVDS、串行信号)影响极小,保有信号完整性。
  • 低漏电流:反向漏电仅约 1 μA,适用于对静态功耗敏感的系统。
  • 小封装:SOD-323 体积小,便于在空间受限的电路板上布局。

四、典型应用场景

  • USB、UART、I2C、SPI 等高速/低频接口的输入端防护;
  • 12 V 及以下电源线的局部浪涌与静电保护(建议Vrwm不超过器件额定值);
  • 智能手机配件、便携式终端、通讯模块、IoT 设备及其他需兼顾体积与高速信号完整性的消费电子产品。

五、安装与 PCB 布局建议

  • 将 UDD32C12L01 放置于受保护端口附近,尽量靠近连接器,缩短从端口到防护器件的走线长度;
  • 为达到最佳放电性能,地线应采用低阻抗接地(地平面或宽地回流槽),避免细长回流路径;
  • 在高频信号线应用中,注意器件两端走线的阻抗匹配,以及最小化并联寄生电容对信号的影响;
  • 对于需要更大能量吸收的场合,考虑并联或采用更大封装的 TVS 器件以分摊冲击能量。

六、选型建议与注意事项

  • 若保护对象为高速差分信号或对延迟、失真极为敏感的线路,UDD32C12L01 以其低结电容为优先选项;
  • 对于频繁遭受高能浪涌或需要更高冲击能量承受能力的系统,应选用额定能量更高、封装更大的器件;
  • 注意 Vrwm(12 V)限制,长期在接近或超过该电压下工作会影响器件寿命;
  • 结合系统的最大允许钳位电压与被保护器件耐压,确认 Vc(约 28.6 V)在冲击条件下不会对下游元件造成损伤。

UDD32C12L01 以其小体积、低电容与良好的抗扰度,适合在空间受限且需保留信号完整性的电子设计中作为优先的 ESD/浪涌防护选型。

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