WMSIC Electronic Components

BORN SI2333

ModelSI2333
PackageSOT-23
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN SI2333
Type
BORN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
SI2333
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0222269221
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Gate Voltage(Vgs)
8V
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
12V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2333 产品概述

产品名称: SI2333

类型: 场效应管 (MOSFET)

封装类型: SOT-23

品牌: BORN(伯恩半导体)

额定功率: 1.25W

最大漏极电压 (V_DS): 12V

最大漏极电流 (I_D): 7.1A

特性概述: SI2333是一款由伯恩半导体生产的高性能P沟道MOSFET,具有优良的电气特性和可靠的工作性能。该器件被广泛应用于各种电子电路中,如开关电源、马达驱动、负载控制和信号调节等。它在低电压和高电流下能够有效运行,适合多种工业和消费电子设备。

电气特性: SI2333的P沟道架构使其在关断时能够有效抑制反向电流,从而确保电路的安全性和稳定性。在1.25W的功率限制下,SI2333可承受最高12V的漏极电压,并能够实现7.1A的最大漏极电流。其脉冲开关特性和快速响应时间使其能够胜任高频率的开关操作,适合用于需要快速开关的应用场合。

关键参数:

  • 导通电阻 (R_DS(on)): 低导通电阻是MOSFET的重要特性之一,SI2333的导通电阻在额定条件下表现优异,大幅度降低功耗和发热,提升整体电路的效率。
  • 反向恢复特性: 优越的反向恢复特性使得SI2333在开关过程中生成的反向电流较小,可以有效减少由此带来的噪声和干扰。

应用场景:

  1. 电源管理: SI2333非常适合用于开关电源和DC-DC转换器,在电源管理中起到高效转换的作用。
  2. 马达控制: 在改革和控制直流马达的驱动系统中,SI2333确保了可靠的开关控制和负载调节。
  3. 负载开关: SI2333可用作负载开关,控制电路中的各种负载,包括LED照明、加热元件等。
  4. 信号开关: 它能够实现高频开关动作,适合用于音视频设备的信号切换以及其他信号处理场合。

优点:

  • 高效率: 其低导通电阻和高电流处理能力确保了电路的高能效,减少了不必要的能量损耗。
  • 小型封装: SOT-23封装使得SI2333适合于小型化设计,便于集成到各种紧凑型电子设备中。
  • 可靠性高: 伯恩半导体凭借其高质量的制造工艺,确保SI2333在长期工作中具有稳定的性能表现和出色的使用寿命。

温度范围: SI2333的工作环境温度一般在-55°C到+150°C之间,这使得它能够适应不同的工作环境,包括高温和低温应用。

结论

SI2333作为一款功能强大的P沟道MOSFET,在小型化电子设备中提供了出色的电气性能和可靠性。无论是在电源管理、马达控制,还是在负载开关和信号开关应用中,SI2333都能够为设计师和工程师提供一个高效、经济和高性能的选择。通过合理利用其特性,用户可以在复杂的电气设计中实现更高的效率和更好的耐用性。

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