WMSIC Electronic Components

BORN BNESD9L3.3ST5G

ModelBNESD9L3.3ST5G
PackageDFN1006-2
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BNESD9L3.3ST5G
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BNESD9L3.3ST5G
Electronic Component
1
Package
DFN1006-2
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.4pF
Electronic Component
BM0258858734
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BNESD9L3.3ST5G 产品概述

一、产品简介

BNESD9L3.3ST5G 是 BORN(伯恩半导体)推出的一款单路单向瞬态抑制二极管(ESD 保护器件),面向 3.3V 工作电压的信号线和接口防护。器件采用超小型 DFN1006-2 封装,适合空间受限的消费电子、通信模块和工业接口应用,能对抗静电放电与浪涌等瞬态危险,保障系统可靠性。

二、主要性能特点

  • 极性:单向(正向对地钳位)
  • 反向截止电压 Vrwm:3.3V(适配 3.3V 系统)
  • 击穿电压(Vbr):6V(典型)
  • 钳位电压:15V(Ipp 条件下)
  • 峰值脉冲电流 Ipp:4A @ 8/20µs
  • 峰值脉冲功率 Ppp:60W @ 8/20µs
  • 反向漏电流 Ir:500 nA(常温)
  • 结电容 Cj:0.4 pF(低电容,适合高速信号)
  • 通道数:单路;防护等级符合 IEC 61000-4-2 / 4-4 / 4-5 标准

三、典型应用场景

  • 接口保护:USB、UART、I2C、SPI 等外部接口防静电
  • 无线模块:天线开关、射频前端保护(需注意低电容要求)
  • 消费电子:触摸屏、按键、显示器接口保护
  • 工业控制:现场总线和传感器线缆的浪涌/脉冲防护

四、封装与 PCB 布局建议

  • 小尺寸 DFN1006-2 便于高密度板级布置,推荐将器件靠近需要保护的接口或引脚放置,以缩短走线并减小回路面积。
  • 为获得最佳放电性能,保护二极管的接地端应通过宽铜迹或多个过孔快速连接到系统接地。
  • 对于高速信号,0.4 pF 的低结电容有利于信号完整性,但仍建议在布局时评估串扰与阻抗匹配。
  • 焊接工艺按 DFN 小封装标准操作,注意回流曲线和湿度敏感等级(建议在生产中参考厂商封装说明)。

五、选型与使用注意事项

  • 确认电路工作电压不超过 Vrwm(3.3V),以避免器件在正常工作时进入击穿区。
  • 钳位电压 15V 是在 Ipp 条件(8/20µs)下的参考值,实际系统中若需更低钳位电压应考虑并联或选用更低 Vc 型号。
  • 在高能脉冲或多次冲击环境下,评估器件平均功耗与热沉散热能力,必要时采取级联或更高额定能量的防护方案。
  • 对于对漏电敏感的低功耗电路,Ir = 500 nA 为典型值,需在系统功耗预算中考虑。

六、可靠性与认证

BNESD9L3.3ST5G 符合 IEC 61000-4-2(静电放电)、IEC 61000-4-4(快速瞬变脉冲)与 IEC 61000-4-5(浪涌)等电磁兼容测试要求,能在常见工业与民用静电/浪涌场景下提供有效保护。对于关键应用,建议结合实际系统进行整机级 EMC/ESD 验证。

如需样品、封装尺寸图或 PCB 推荐焊盘,请提供项目需求与应用场景,便于给出更针对性的物料建议与布局图样。

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