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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
BORN PESD5V0V1BL-N
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN PESD5V0V1BL-N
- Type
- BORN
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- PESD5V0V1BL-N
- Electronic Component
- 1
- Package
- DFN1006-2
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.009g
- Electronic Component
- 1
- Cj- Capacitor
- 8pF
- Electronic Component
- BM0227516280
- Voltage
- 13V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 6V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PESD5V0V1BL-N 产品概述
一、产品简介
PESD5V0V1BL-N 是 BORN（伯恩半导体）推出的一款双向 ESD 保护二极管，采用 DFN1006-2 超小封装，专为 5V 工作电压的高速信号线与接口保护而设计。器件在面对静电放电（ESD）、电快速瞬变（EFT）和浪涌（Surge）时能提供可靠的瞬态抑制，适合消费电子、通信与工业设备的接口保护需求。
二、主要电气参数
- 钳位电压（Vclamp）：13 V（典型），在脉冲事件中限制电压幅值，降低系统受损风险。
- 击穿电压（Vbr）：6 V（典型），器件触发导通的阈值。
- 反向截止电压（Vrwm）：5 V，适配 5V 系统直连保护。
- 峰值脉冲功率（Ppp）：65 W @ 8/20 µs，能承受常见浪涌能量。
- 峰值脉冲电流（Ipp）：5 A（8/20 µs），支持短时高电流冲击。
- 结电容（Cj）：8 pF（典型），对高速信号影响小，适用于 USB、HDMI、LVDS 等高速接口。
- 反向漏电流（Ir）：1 µA（最大），保证系统静态功耗低。
- 极性：双向（Bidirectional），可保护双向信号或无参考极性的线路。
- 防护等级：满足 IEC 61000-4-2、IEC 61000-4-4、IEC 61000-4-5 标准要求。
三、典型应用场景
- USB、USB OTG 与其它 5 V 数据口保护
- HDMI、MIPI、视频接口的输入端防护（对高速信号影响小）
- SIM、SD 卡槽、GPIO、按键与触摸屏控制线的静电与瞬态防护
- 工业通信端口、传感器接口和边缘设备的浪涌抑制
四、封装与可靠性
- 封装：DFN1006-2（超小体积），适合空间受限的移动设备和可穿戴产品。
- 热性能与可靠性良好，推荐在设计时参考厂商数据手册的推荐焊盘和回流工艺以确保长期稳定性。
- 双向结构无需考虑极性，简化装配与库存管理。
五、PCB 布局建议
- 器件应尽量靠近需保护的连接器或接口引脚放置，走线距离越短越好以减小串联感应。
- 将器件接地端与系统地（GND）以短、粗的回流路径相连，必要时增加过孔直接回到接地平面。
- 对高速差分或单端信号，注意保持阻抗连续性，避免额外串联电阻或长走线导致信号完整性问题。
- 小结电容（Cj）虽低，但在超高速应用中仍需评估对信号带宽的影响。
六、选型与使用建议
- 若系统工作电压稳定在 5 V 且需保护双向信号（如 USB OTG），PESD5V0V1BL-N 为合适选择。
- 对于更高能量的重复浪涌或工业级冲击，应结合浪涌抑制器（TVS 数组或气体放电管）做二级保护。
- 在批量采购或设计验证前，建议参考厂商完整数据表并做实际的 ESD/Surge 测试验证。
PESD5V0V1BL-N 以其低电容、低漏电和良好的瞬态承受能力，为对空间与信号完整性有要求的 5V 接口提供高效、可靠的瞬态保护解决方案。
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