WMSIC Electronic Components

BORN BNESD5451N

ModelBNESD5451N
PackageDFN1006-2
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BNESD5451N
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BNESD5451N
Electronic Component
1
Package
DFN1006-2
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
14pF
Electronic Component
BM0264583398
Voltage
12V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BNESD5451N 产品概述

一、概述

BNESD5451N 是一款基于硅雪崩结构的双向瞬态电压抑制器(TVS),为单通道保护器件,专为数据线与电源线的浪涌和静电放电保护而设计。器件在8/20μs波形下可提供72W峰值脉冲功率(Ppp),典型钳位电压低至12V,符合严格的工业抗扰度标准,适合便携与消费类电子设备的可靠性提升。

二、主要电气参数

  • 极性:双向
  • 反向截止电压 Vrwm:5V
  • 击穿电压 VBR:7.5V
  • 钳位电压(典型):12V
  • 峰值脉冲电流 Ipp:6A @ 8/20μs
  • 峰值脉冲功率 Ppp:72W @ 8/20μs
  • 反向电流 Ir:500nA
  • 结电容 Cj:14pF
  • 通道数:单路

三、抗扰度与安全合规

BNESD5451N 满足并通过多项抗扰度测试标准:

  • IEC 61000-4-2(ESD):±25kV 接触/空气放电等级
  • IEC 61000-4-4(EFT):可承受 40A(5/50ns)脉冲
  • IEC 61000-4-5(雷击):6.0A @ 8/20μs
    此外,器件采用 DFN1006-2 封装,材料符合 UL 94V-0 阻燃等级,产品满足 RoHS/WEEE 环保要求。

四、核心优势

  • 双向保护适用于差分线与双向信号,无需额外方向控制;
  • 低钳位电压(12V)有助于降低保护期间对后端电路的应力;
  • 低漏电流(500nA)适合对静态功耗敏感的便携设备;
  • 14pF 的结电容使其适配高速数据线时对信号完整性影响最小;
  • 紧凑的 DFN1006-2 外形利于空间受限的 PCB 布局。

五、典型应用

适用于手机及配件、PDA、笔记本与台式机外设、基于 MCU 的控制板、便携式仪表和服务器外部接口等场景,尤其适合对 ESD/EFT 有严格要求且受限于封装尺寸的高速接口保护(如 USB、串行信号线、SIM 卡接口等)。

六、使用建议

  • 建议将器件尽量靠近需保护的连接器或接口布置,以缩短回路和降低寄生电感;
  • 对高速差分线应用,请评估 14pF 结电容对信号带宽的影响,必要时与线路阻抗匹配优化;
  • 对于需要更大能量吸收的场合,可与熔断器或保险元件配合使用以提高系统耐受度;
  • 焊接及回流过程中遵循 DFN 封装工艺规范,避免过热导致器件性能退化。

七、结论

BNESD5451N 在小尺寸封装下整合了高能量吸收能力与低钳位/低漏电的特性,是对高速数据线和便携设备接口进行高可靠性瞬态防护的优选方案。其符合多项 IEC 抗扰度标准与环保/安全认证,便于在量产产品中直接集成使用。

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