WMSIC Electronic Components

BORN BNPGB1010402KR

ModelBNPGB1010402KR
PackageDFN1006-2L
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BNPGB1010402KR
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BNPGB1010402KR
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.05pF
Electronic Component
BM0264602966
Operating Temperature
40℃~+125℃
Voltage
40V
Electronic Component
IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BNPGB1010402KR 产品概述

一、产品简介

BNPGB1010402KR 是 BORN(伯恩半导体)推出的一款单路双向 ESD 抑制器,专为高速信号线和敏感接口的静电防护设计。器件具有极低结电容(Cj = 0.05 pF)、钳位电压 40 V、极低反向漏电流(Ir = 10 nA),并采用超小型 DFN1006-2L 封装,适合空间受限的消费电子、通信与工业应用。

二、主要规格亮点

  • 极性:双向,适用于正负极性瞬态抑制
  • 钳位电压:40 V,钳位有效、能迅速限制浪涌峰值
  • 反向电流(Ir):10 nA,确保对信号线的漏电影响极小
  • 通道数:单路,便于单线逐一保护或与多通道阵列配合
  • 工作温度:-40 ℃ ~ +125 ℃,满足工业级温度要求
  • 防护标准:符合 IEC 61000-4-2 抗静电测试规范
  • 结电容(Cj):0.05 pF,极低电容对高速信号影响微乎其微
  • 封装:DFN1006-2L,体积小、布局灵活

三、典型应用场景

  • 高速数据接口(如差分对、超高速串行信号)
  • USB、HDMI、MIPI、LVDS 等对电容高度敏感的信号线保护
  • 便携设备与消费类电子的输入/输出接口防护
  • 工业控制与通信设备的防静电与瞬态浪涌保护

四、板级布局与使用建议

  • 将器件尽量靠近被保护端口布置,缩短信号到器件的走线长度,降低回路感抗。
  • 接地引脚采用低阻抗过孔,保证快速能量泄放;若为多层板,建议使用完整地平面。
  • 对高速差分信号,建议在每条线上分别使用单通道器件,或根据系统设计选择差分保护方案。
  • 对于需要更高浪涌能量的场景,可与串联电阻、共模抑制器或保险元件协同使用,形成多级防护。

五、选型与对比要点

BNPGB1010402KR 的突出优势在于超低结电容与较低钳位电压,适合对信号完整性要求高的接口。选型时应注意:

  • 若系统工作电压接近或高于器件钳位电压,应选择额定工作电压更高的保护器。
  • 对需同时保护多路信号的场合,可选择多通道阵列封装以节省 PCB 面积。
  • 若侧重更高的冲击能量吸收能力,应在器件参数表中比较峰值放电电流(Ipp)和能量吸收能力。

六、可靠性与环境适应

BNPGB1010402KR 支持 -40 ℃ 至 +125 ℃ 的工作温区,适用于工业级应用。DFN1006-2L 小封装既满足空间约束,又利于自动贴装,可靠性与工艺兼容性好。按照常规 SMT 工艺进行回流焊接,并遵循厂商的焊接温度曲线,可获得稳定性能。

七、总结

BNPGB1010402KR 是一款面向高速信号线的低电容双向 ESD 保护器,兼顾了信号完整性与抗静电能力。其极低的结电容和微小封装使其在现代便携与高速接口防护中具有明显优势。选用时应结合系统工作电压、浪涌能量需求及 PCB 布局,做到防护与信号性能的最佳平衡。

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