WMSIC Electronic Components

BORN BNAZ5825-01F

ModelBNAZ5825-01F
PackageDFN1006-2L
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BNAZ5825-01F
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BNAZ5825-01F
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Cj- Capacitor
38pF
Electronic Component
BM0264583393
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA
Voltage(VBR)
9.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BNAZ5825-01F 产品概述

一、产品简介

BNAZ5825-01F 是 BORN (伯恩半导体) 推出的一款双向瞬态电压抑制器(TVS),采用固态硅雪崩工艺,针对静电放电(ESD)、脉冲干扰和浪涌保护设计。器件为 DFN1006-2L 小封装,适合体积受限的便携式和基于微处理器的设备防护需求。

二、主要参数

  • 极性:双向
  • 反向截止电压 Vrwm:5 V
  • 击穿电压 VBR:9.5 V(典型)
  • 钳位电压:15 V(在峰值脉冲条件下)
  • 峰值脉冲电流 Ipp:20 A @ 8/20 μs
  • 峰值脉冲功率 Ppp:240 W @ 8/20 μs
  • 反向电流 Ir:500 nA(在 Vrwm 条件下)
  • 结电容 Cj:38 pF
  • 防护等级:符合 IEC 61000-4-2 / 4-4 / 4-5(ESD ±30 kV 接触/空气)

三、特性亮点

  • 240 W 峰值脉冲功率能力,能有效吸收工业级脉冲和雷击残波。
  • 双向结构适合保护可能出现正负电压摆幅的信号线与接口。
  • 低钳位电压,有利于在瞬态发生时保护下游芯片免受过压。
  • 低泄漏电流,有利于降低静态功耗,适合电池供电设备。
  • 符合多项 IEC 防护标准,可靠性高。

四、典型应用

  • 基于微处理器的便携设备与终端(PDA、工业手持终端)
  • 接口保护:电源 5 V 轨、通用串行接口、GPIO 与控制信号线(注意 Cj 对高速信号的影响)
  • 工业与消费类电子中的外部 I/O、按键与连接器防护

五、设计与布局建议

  • 将器件尽量靠近受保护的引脚布局,缩短走线以降低串联感性。
  • 为获得最佳性能,可靠接地非常关键:使用短而粗的接地回路连接至器件地或地平面。
  • 结电容 38 pF 在高速差分总线(如 USB3.0、HDMI)可能影响信号完整性,若用于高速信号需评估或选用低容版本;但对一般 5 V 接口与低速信号线适用。
  • 在高能脉冲环境下,可配合限流电阻或滤波网络提升系统抗扰度。

六、封装与订购信息

  • 封装:DFN1006-2L,适合自动贴装与小体积设计。
  • 品牌:BORN(伯恩半导体)
  • 型号:BNAZ5825-01F

BNAZ5825-01F 提供在紧凑封装下的高能量吸收与多重 IEC 级别防护,适用于对 5 V 轨和双向信号线有较高抗干扰要求的便携与嵌入式设备。选择与布板时,请结合结电容与信号速率权衡,以确保系统性能与防护能力的最佳平衡。

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