WMSIC Electronic Components

BORN BNBTRD04A035

ModelBNBTRD04A035
PackageDFN1006-2L
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BNBTRD04A035
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BNBTRD04A035
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.3pF
Electronic Component
BM0264692217
Voltage
16V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
100nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BNBTRD04A035 产品概述

一、产品简介

BNBTRD04A035 是 BORN(伯恩半导体)推出的一款低容抗静电保护二极管,采用 DFN1006-2L 小封装,单路双向保护设计,专为对信号完整性要求高且空间受限的接口防护场景而优化。器件具有极低结电容和极小的泄漏电流,可在保持高速信号传输性能的同时提供可靠的瞬态过电压与静电放电(ESD)防护。

二、主要参数

  • 极性:双向
  • 额定反向工作电压 Vrwm:5 V
  • 击穿电压 VBR:9.5 V
  • 钳位电压(典型):16 V(Ipp=4 A,8/20 μs)
  • 峰值脉冲电流 Ipp:4 A @ 8/20 μs
  • 峰值脉冲功率 Ppp:80 W @ 8/20 μs
  • 反向漏电流 Ir:≤100 nA(Vrwm 条件下)
  • 结电容 Cj:0.3 pF(低电容,适合高速接口)
  • 通道数:单路(1 channel)
  • 封装:DFN1006-2L(超小型 2 引脚封装)
  • 防护等级:满足 IEC 61000-4-2 / 4-4 / 4-5 标准
  • 类型:ESD 保护器件

三、关键特性

  • 低结电容(0.3 pF):最大限度减少对高速信号的影响,适合 USB、MIPI、LVDS、TTL 等高速数据线保护。
  • 双向保护:对正负瞬态脉冲均能有效钳位,无需外加极性区分,便于对称信号的防护。
  • 高冲击能力:支持 4 A 峰值脉冲电流(8/20 μs)和 80 W 峰值脉冲功率,能承受常见浪涌与 ESD 能量。
  • 低漏电流:漏电仅 100 nA 级别,适用于对待机功耗敏感的便携设备。
  • 小尺寸封装:DFN1006-2L 有利于节省 PCB 空间,适合移动设备和可穿戴产品。

四、典型应用

  • 手机、平板、笔记本等移动终端的高速数据口保护(如 USB、MIPI、Camera)
  • 消费电子与 IoT 设备的 I/O 接口防护
  • 工业控制与通信设备的信号线/控制线防护(要求低容并需双向钳位)
  • 可穿戴设备、智能家居传感器等对尺寸和功耗敏感的场合

五、封装与 PCB 布局建议

  • 器件采用 DFN1006-2L 超小封装,建议靠近被保护的接口端口放置,尽量缩短引线长度以降低串扰与钳位延迟。
  • 对地走线应尽量低阻并使用完整的地平面,避免高频回流路径过长。
  • 对于高速差分线,器件置于差分对的共模点或对称位置以确保双向保护效果与最小信号畸变。
  • 焊盘与热铺铜按照厂家推荐的封装说明设计,以确保可靠焊接与散热。

六、合规与可靠性

BNBTRD04A035 满足 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT/脉冲群)及 IEC 61000-4-5(雷击浪涌)等级要求,适用于严苛电磁兼容防护设计。产品在低温漂移、低漏电与高重复冲击条件下表现稳定,适合工业级与消费级应用。

如需获取详细电气特性曲线、封装尺寸图和推荐焊盘布局,请联系 BORN(伯恩半导体)或参考器件数据手册。

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