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BORN BESD3301P
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BESD3301P
- Type
- BORN
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BESD3301P
- Electronic Component
- 1
- Package
- DFN1006
- Electronic Component
- Electronic Component
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.006g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.4pF
- Electronic Component
- BM0264682158
- Voltage
- 19V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 500nA
- Voltage(VBR)
- 7.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BESD3301P 产品概述
一、产品简介
BESD3301P 是 BORN（伯恩半导体）推出的一款微型双向瞬态电压抑制二极管，采用微型 DFN1006 封装，基于固态硅雪崩技术。器件为单路、双向配置，专为移动设备与基于微处理器的终端提供瞬态浪涌与静电防护，兼顾小体积、高可靠性与低寄生特性，适合贴片自动化装配。
二、主要参数与特性
- 反向截止电压 Vrwm：3.3 V（适配 3.3V 信号/电源线）
- 击穿电压 VBR：7.5 V
- 钳位电压（典型）：19 V
- 峰值脉冲电流 Ipp：3.5 A（8/20 μs）
- 峰值脉冲功率 Ppp：60 W（8/20 μs）
- 反向泄漏电流 Ir：≤ 500 nA（室温）
- 结电容 Cj：0.4 pF（极低电容，利于高速信号）
- 通道数：单路，双向结构
- 防护等级：符合 IEC 61000-4-2、IEC 61000-4-4、IEC 61000-4-5 标准
- 封装：DFN1006 微型封装，利于高密度布局
三、典型应用场景
- 手机及配件（充电/数据接口、按键与控制线路）
- 基于微处理器的消费电子设备（GPIO、低压电源轨）
- 高速数据线或信号线的ESD与浪涌防护（得益于 0.4 pF 的低结电容）
- 便携设备中的电源输入与接口保护
四、设计与布局建议
- 将 BESD3301P 放置在被保护端口或器件的近侧，尽量靠近连接器或信号进入点以减小感应环路。
- 走线短且粗直，减少环路电感以提高抑制效率；保护器件的接地回流路径应尽量直接、低阻。
- 对于对浪涌能量更高的场合，可在前端增加串联阻抗（如小电阻）以分担能量。
- 在布线与焊盘设计上参照厂商 DFN1006 推荐焊盘布局，采用合适的回流焊工艺，注意焊盘助焊膏量以避免浮焊或开路。
- 器件在静态漏电敏感电路中优势明显，但在配置前需确认钳位电压对下游器件的耐受性。
五、选型与使用要点
- 低结电容（0.4 pF）使其非常适用于高速信号线及接口保护，同时对信号完整性影响小。
- 低泄漏（≤500 nA）有利于低功耗待机状态下节能。
- 双向结构方便保护对称信号或无方向性的接口（如差分线或双向数据线）。
- 选择时务必确认 Vrwm 与系统工作电压匹配（本器件适配 3.3 V 级别）。
- 对于更高能量的冲击或更苛刻钳位要求，应结合系统级保护进行评估。
六、合规与可靠性要点
BESD3301P 满足 IEC 61000-4-2（静电放电）、IEC 61000-4-4（电快速瞬变）及 IEC 61000-4-5（浪涌）相关测试要求，采用成熟的硅雪崩工艺，具有良好的瞬态承受能力与重复保护性能。实际设计中建议参考厂商提供的脉冲曲线、热阻及封装机械图以完成可靠性评估与封装工艺制定。
如需获取封装推荐焊盘、回流曲线、典型钳位波形与详细测试条件，建议联系 BORN（伯恩）获取完整数据手册与应用笔记。
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