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BORN SI2309S
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN SI2309S
- Type
- BORN
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- SI2309S
- Electronic Component
- 1
- Package
- SOT-23-3L
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0229906774
- Operating Temperature
- 50℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 364pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2309S 产品概述
一、产品简介
SI2309S 是一款 P 沟道金属氧化物半导体场效应管（MOSFET），由 BORN（伯恩半导体）提供，封装为 SOT-23-3L，单片 P 沟道器件。规格显示为 60V 耐压、适合小电流高压场合的高边开关解决方案。资料中给出的导通电阻在不同来源有略微差异（描述中有 170mΩ@10V，基础参数列出 215mΩ@10V），实际设计时请以厂方数据手册为准。
二、关键电参数
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：1.9A
- 耗散功率 Pd：1.4W（无外部散热条件）
- 导通电阻 RDS(on)：约 170–215mΩ（@ VGS=10V，具体以型号标注为准）
- 阈值电压 Vgs(th)：3V @ 250µA
- 栅极总电荷 Qg：6.3nC（标注条件 0V）
- 输入电容 Ciss：364pF，输出电容 Coss：41pF，反向传输电容 Crss：12pF
- 工作温度：-50℃ ~ +150℃
三、主要特性与优势
- 60V 高压额定，适合汽车级或工业级电源路径与保护场合。
- SOT-23 封装体积小、适合表面贴装与高密度 PCB 布局。
- 中等导通电阻与较低栅极电荷，兼顾导通损耗与开关损耗，适合低到中速开关与模拟大电流切换。
- 宽工作温度范围，利于恶劣环境下的可靠性应用。
四、典型应用场景
- 高边负载开关与电源分配（电池管理、便携设备）
- 反向电流保护与电源路径控制
- 工业控制模块、仪表电源隔离与开关
- 需在有限 PCB 面积内实现 60V 级保护与开关的场合
五、使用建议与注意事项
- 门极驱动：Vgs(th) ≈ 3V，器件在 10V 门极驱动下可达到规格 RDS(on)。若采用逻辑电平（3.3V/5V）驱动需评估导通电阻增长及发热。
- 热设计：Pd 标称 1.4W，实际允许功耗受 PCB 铜箔面积与环境温度影响，建议在高电流工作时加大铜箔散热或使用热铺。按 I^2·R 计算损耗并留足裕量。
- 快速开关时考虑 Ciss/Coss/Crss 对驱动电流的影响，Qg≈6.3nC 表明驱动电流需求为中等，应在驱动回路中布置合适的驱动阻抗与阻尼。
- 封装与焊接：SOT-23-3L 适合回流焊，但引脚定义与最大 Vgs 等极限值请参照原厂数据手册，避免超出绝对最大额定值。
- 建议在设计前获取完整数据手册，确认引脚排列、最大允许 Vgs、开关能耗曲线与 SOA 限制。
如需我为您生成基于 SI2309S 的典型高边开关原理图、热仿真估算或更详细的参数比对表，请告知具体应用电压、电流及驱动电平，我可进一步提供设计建议与计算示例。
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