WMSIC Electronic Components

BORN BDFN1C051R

ModelBDFN1C051R
PackageDFN0603-D
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BDFN1C051R
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BDFN1C051R
Electronic Component
1
Package
DFN0603-D
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.008g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.2pF
Electronic Component
BM0263578201
Voltage
13V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
100nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BDFN1C051R 产品概述

一、产品概述

BDFN1C051R 是 BORN(伯恩半导体)推出的一款针对高速信号线的双向静电放电(ESD)瞬态抑制器。器件工作在低钳位电压并具有极低结电容,专为保护 5V 及以下的接口(例如 USB、HDMI、串行接口、传感器信号线等)免受静电放电、脉冲群(EFT)和浪涌冲击而设计。单路结构、小型 DFN0603-D 封装,适合空间受限的移动终端、消费电子与工业控制板级防护。

二、主要性能参数

  • 极性:双向(Bi-directional),可双向钳位正负极性瞬变
  • 反向截止电压 VRWM:5V(适配 5V/3.3V 系统保护)
  • 击穿电压 VBR:5.5V
  • 钳位电压(典型):13V(在规定的冲击条件下)
  • 峰值脉冲电流 Ipp:4A @ 8/20μs
  • 反向漏电流 Ir:100 nA(在 VRWM 下)
  • 结电容 Cj:0.2 pF(极低电容,最小化对高速信号的影响)
  • 通道数:单路
  • 防护等级:满足 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)、IEC 61000-4-5(浪涌)
  • 封装:DFN0603-D,小尺寸、低剖面

三、关键特性与优势

  • 低结电容(0.2 pF):对高速差分或单端信号影响极小,适合高速数据链路和高频应用,保证信号完整性(SI)与低插入损耗。
  • 双向保护:无需区分方向,直接并联在线路与地之间,对双极性瞬变均可响应。
  • 低漏电流与低工作电压:VRWM=5V 与 Ir=100 nA,适合对待机功耗敏感的电路,避免影响正常工作电平。
  • 紧凑封装:DFN0603-D 提供最小占板面积,便于在紧凑型移动设备与小型模块中布置。
  • 工业级抗扰度:通过 IEC 61000-4-2/4-4/4-5 认证要求,提供全面的静电、电快速瞬变和浪涌保护能力。

四、典型应用场景

  • USB(含 USB2.0/USB3.0 前端保护)与音视频接口(HDMI/DisplayPort 辅助线)
  • 高速串行数据接口、差分对、SDA/SCL、UART、SPI 信号保护
  • 手机、平板与可穿戴设备的外部 I/O 保护
  • 工业控制与传感器前端:低电容特性适合微弱模拟/数字信号线的保护
  • 网络设备的管理口与串口保护

五、封装与安装建议

  • 推荐靠近需要保护的连接器或线缆端放置 TVS 器件,尽量缩短受保护信号与器件之间的走线长度,以降低感性和寄生电阻导致的钳位性能下降。
  • 接地面应尽可能靠近器件的地焊盘,并通过多孔过孔将保护地与系统地可靠连接,减少回路阻抗。
  • 在差分高速线应用中,器件并联时要注意与差分阻抗匹配,必要时配合微小串联阻抗或共模滤波器以优化信号完整性与防护性能。
  • 焊接时遵守 DFN 封装的回流工艺规范,避免过热导致封装应力或性能退化。

六、使用与选型建议

  • 若保护对象为 5V 电源或数据线,BDFN1C051R 的 VRWM=5V 与低钳位使其成为优先选择;对于更高工作电压场景,应选用更高 VRWM 的器件。
  • 对于极高能量的浪涌或需要更大电流吸收能力的场合,可在系统级采用多级防护(如串联限流电阻 + TVS 或外加高功率浪涌吸收组件)。
  • 注意器件的 Ipp 为 4A @ 8/20μs,超过此能量时器件可能失效,应在产品可靠性评估中加入实际应用环境的冲击测试。

BDFN1C051R 以其低电容、低漏电、紧凑封装与对常见工业标准的兼容性,为要求高速信号完整性同时需强抗干扰能力的电子产品提供可靠的一级板级防护。

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