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BORN BESD5V0D5
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BESD5V0D5
- Type
- BORN
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BESD5V0D5
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Cj- Capacitor
- 80pF
- Electronic Component
- BM0264602943
- Voltage
- 13V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 500nA
- Voltage(VBR)
- 6V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BESD5V0D5 产品概述
一、产品简介
BESD5V0D5 是 BORN（伯恩半导体）推出的一款单向 ESD 抑制二极管，采用固态硅雪崩技术，专为敏感电子接口提供瞬态过压保护设计。器件封装为 SOD-523，体积小、适合贴片安装，适用在以微处理器为核心的便携设备与外设接口保护场合，如个人数字助理（PDA）、移动终端及各类 MCU/SoC 的 I/O 线。
二、主要参数与特性
- 极性：单向（适合对地参考的信号线保护）
- 反向保持电压 Vrwm：5V（适配 5V 系统电压）
- 击穿电压 VBR：6V（典型）
- 钳位电压：13V（在 8/20μs 测试波形下）
- 峰值脉冲电流 Ipp：15A @ 8/20μs
- 峰值脉冲功率 Ppp：250W @ 8/20μs
- 反向电流 Ir：500nA（在 Vrwm 条件下低泄漏）
- 结电容 Cj：80pF（需在高速信号设计中评估对带宽的影响）
- 抗扰度等级：符合 IEC 61000-4-2（ESD ±30kV 空气/接触放电）、IEC 61000-4-4、IEC 61000-4-5
器件特点包括低钳位电压、低泄漏电流和高峰值脉冲承受能力，能在瞬态冲击时迅速导通，将危险电压钳制在安全范围内，减小对后端电路的冲击。
三、典型应用
- MCU/SoC 的 GPIO、UART、I2C、SPI 等接口保护
- 移动设备、PDA、手持终端的外部连线保护（USB、耳机等）
- 工业和消费类电子的信号线及控制线防护
- PCB 上靠近外部接口、连接器或天线端口的浪涌与静电防护点
四、布局与使用建议
- 将 BESD5V0D5 尽可能靠近被保护的接口或器件引脚布置，减少走线电感和串联阻抗。
- 负极（阴极）应直接接地，建议使用尽量宽且短的地铜箔回流路径，以提高吸收瞬态能量的能力。
- 对于高速差分信号或对低电容要求高的场合，注意 80pF 的结电容对信号完整性的影响，必要时评估或选用更低 Cj 的器件。
- 在电源线或需要更高能量吸收的场合，可与串联阻抗（如小电阻）或共模滤波器配合使用以改善浪涌分配。
五、注意事项
- 钳位电压 13V 为在标准 8/20μs 测试波形下的典型值，实际电路中的峰值可能因走线、电感和并联元件不同而有所差异。
- 器件为单向型，若需对双向信号保护，应选用双向型号或采用对称配置。
- 在重复高能脉冲或恶劣环境下使用前，请按实际应用做热与寿命评估。
BESD5V0D5 以其小尺寸、高能量吸收能力与对 5V 系统友好的钳位水平，适合在空间受限但需可靠防护的便携与消费类电子产品中使用。
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