Model & package intelligence
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BORN BZT52C3V9S
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BZT52C3V9S
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BZT52C3V9S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.026g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 90Ω
- Electronic Component
- BM0230110304
- Diode
- 1
- Current(Ir)
- 3uA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 3.1V~4.1V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V9S 产品概述
一、产品简介
BZT52C3V9S 是 BORN（伯恩半导体）系列的小功率稳压二极管，标称稳压值 3.9V。器件采用 SOD‑323 小型封装，额定耗散功率 Pd=200mW，适合便携设备和低功耗电源中的基线稳压、参考基准与浪涌钳位应用。器件在低电流条件下具有极低的反向漏电流，典型 Ir≈3μA（在 1V 测试点）。
二、主要电气参数
- 标称稳压值：3.9V；常见测量分布区间 3.82V ~ 3.98V（出厂件差异受工艺影响）；系列可覆盖的生产范围标注为 3.1V ~ 4.1V。
- 反向漏电流 Ir：≈3μA（1V 条件下测量，实际随温度上升）。
- 小信号/工作阻抗：低电流区阻抗 Zzk≈600Ω；稳压工作点阻抗 Zzt≈90Ω（随测试点电流不同而变化）。
- 最大耗散功率 Pd：200mW（SOD‑323，须考虑热降额）。
三、热与功率管理
按理论计算，若在稳压点工作，最大允许电流约 Id_max = Pd / Vz ≈ 200mW / 3.9V ≈ 51mA。但受封装散热限制和长期可靠性影响，不建议长期接近此值。推荐连续工作电流在额定值的 30%50% 范围内（例如 ≤1525mA），高脉冲或短时间浪涌可更高但需注意热应力与峰值电流。
四、典型应用与使用建议
- 低功耗参考源与基线稳压：配合串联限流电阻形成简单稳压电路。
- 电平钳位与浪涌吸收：用于保护敏感输入不超过约 3.9V。
- 逻辑与模拟电路中的局部参考或保护元件。
串联电阻选型示例：若 Vin=12V，目标稳压 Iz=10mA，则 R=(12−3.9)/0.01≈810Ω，电阻功耗 P_R=(12−3.9)0.01≈81mW；二极管功耗 P_D=3.90.01=39mW，满足 Pd 要求且留有余量。
五、封装与布局要点
SOD‑323 封装占板面积小但散热受限，建议：
- 附近增加铜箔散热面积并通过多点走线引出散热路径；
- 在高频或噪声敏感电路中靠近需保护节点布局以减小寄生感抗；
- 避免长导线串联以防寄生电感导致瞬态超压。
六、选型提示与替代
BZT52C3V9S 适合要求体积小、功耗低的稳压与钳位场景。若需更高功率或更低稳压容差，可考虑更大封装或功率更高的稳压二极管；反之若要求更低漏电或精密基准，应选用专用参考源。购买时确认稳压偏差与批次规格以满足系统容差要求。
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