WMSIC Electronic Components

BORN BST23A152V

ModelBST23A152V
PackageSOT-23
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BST23A152V
Type
BORN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BST23A152V
Electronic Component
1
Package
SOT-23
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.033g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
40pF;25pF
Electronic Component
BM0257268400
Operating Temperature
55℃~+125℃
Voltage
30V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BST23A152V 产品概述

一、产品简介

BST23A152V 是 BORN(伯恩半导体)推出的一款单通道双向瞬态电压抑制器(ESD 抑制器),采用 SOT-23 封装,针对工业与消费电子设备的输入/输出接口提供高效的静电与脉冲浪涌保护。器件在常态工作电压下保持高阻态,在遭遇瞬态冲击时迅速导通,把能量安全泄放至地线,保护后端电路。

二、主要电气参数

  • 极性:双向(对称钳位,适用于双向或交流耦合信号线)
  • 反向截止电压 Vrwm:15 V(连续工作电压上限)
  • 击穿电压:16.7 V(器件进入导通区的典型电压)
  • 钳位电压:30 V(在峰值脉冲下的典型钳位电压)
  • 峰值脉冲电流 Ipp:10 A @ 8/20 μs
  • 峰值脉冲功率 Ppp:300 W @ 8/20 μs
  • 反向漏电流 Ir:1 μA(常温典型)
  • 结电容 Cj:典型 25 pF,最大可达 40 pF(与信号完整性相关)
  • 通道数:单路;工作温度范围:-55 ℃ ~ +125 ℃
  • 符合标准:IEC 61000-4-2(静电放电),IEC 61000-4-4(快速瞬变/脉冲)

三、产品特点与优势

  • 双向结构,支持正负极瞬态,适合差分或耦合信号线保护;
  • 低漏电流,适用于对静态功耗敏感的系统;
  • 低结电容(25–40 pF),在大多数高速信号线(如串行总线、音视频接口等)中可维持较好信号完整性;
  • SOT-23 小封装,便于表面贴装,节省 PCB 空间;
  • 满足 IEC ESD/EFT 要求,可靠性高,适合工业级环境。

四、典型应用场景

  • USB、HDMI、音频接口、数据总线和各类通信接口的输入端保护;
  • 工业控制器、人机界面(HMI)、仪表和传感器接口;
  • 汽车电子中的辅助信号线与外部连接点(须注意汽车级认证要求);
  • 一般消费电子及便携设备的外部引脚保护。

五、封装与布局建议

  • 建议将 BST23A152V 尽量靠近被保护的连接器或外部引脚布置,减小寄生电感与阻抗;
  • 器件的地端应有低阻抗的回流路径,使用充足的地铜与短接地回路;
  • 对于高能量脉冲场合,考虑在输入端增加串联阻抗或使用多级保护以分散能量;
  • SOT-23 封装易于自动贴装,注意回流焊温度工艺与静电防护措施。

六、可靠性与注意事项

  • SOT-23 封装的瞬态能量承受能力有限,虽然可承受单次 8/20 μs 的 10 A 冲击,但频繁或更高能量冲击会降低寿命;
  • 对于对信号完整性要求极高的应用(如高速差分对),需评估 25–40 pF 电容对带宽的影响;
  • 在选型时确认 Vrwm(15 V)满足系统最大直流偏置,避免误触发或长期应力。

总结:BST23A152V 以小尺寸、低电容、较高脉冲吸收能力和双向保护特性,适用于对ESD/EFT保护有严格要求且空间受限的应用场景。根据具体系统的能量级别与信号特性,可通过合理的 PCB 布局和多级保护策略实现最佳防护效果。

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