WMSIC Electronic Components

BORN PESD3V3S1UB-N

ModelPESD3V3S1UB-N
PackageSOD-523
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN PESD3V3S1UB-N
Type
BORN
Minimum package
5000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
PESD3V3S1UB-N
Electronic Component
1
Package
SOD-523
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.027g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
160pF
Electronic Component
BM0257629531
Voltage
12V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD3V3S1UB-N 产品概述

一、概述

PESD3V3S1UB-N 是伯恩(BORN)推出的一款单向 TVS 二极管,封装为 SOD-523(SC-79),专为 3.3V 系统线缆、接口和信号线的静电放电(ESD)与浪涌保护设计。器件在小体积下提供较高的峰值脉冲功率和可靠的抗干扰性能,适合集成于移动设备、消费电子、通信与工业控制终端的输入/输出保护电路。

二、主要电气参数

  • 极性:单向
  • 反向工作电压 (Vrwm):3.3 V
  • 击穿电压 (Vbr):6 V(典型)
  • 钳位电压:12 V(在指定脉冲条件下)
  • 峰值脉冲电流 (Ipp):15 A(8/20µs)
  • 峰值脉冲功率 (Ppp):100 W @ 8/20µs
  • 反向电流 (Ir):1 µA(在 Vrwm 下)
  • 结电容 (Cj):160 pF
  • 通道数:单路

三、认证与适用标准

符合 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)及 IEC 61000-4-5(浪涌)相关测试要求,能有效抑制短时高能瞬态,保护下游芯片免受损害。

四、优势与限制

优势:

  • 小型 SOD-523 封装,便于高密度 PCB 布局与自动贴装。
  • 在 8/20µs 测试条件下可承受 100 W 峰值功率,抗浪涌能力强。
    限制:
  • 结电容较高(160 pF),对高频高速信号(如高速 USB/PCIe)可能影响信号完整性,应在设计时评估是否合适。
  • 钳位电压较高(12 V),对对被保护端允许的瞬态电压需确认是否在可接受范围内。

五、典型应用

  • 3.3V 电源轨和供电保护
  • 接口保护:UART、GPIO、低速 USB、I2C(带注意电容影响)
  • 移动设备、消费电子和通信终端的输入接口防护
  • 工业控制模块的端口抗干扰设计

六、布局与使用建议

  • 器件应尽量靠近被保护引脚焊盘放置,减小寄生感抗与回路面积。
  • 将地线通过多短而粗的焊盘或过孔直接返回参考地,保证快速散流。
  • 对于高速信号,若结电容影响信号,应评估替代低容型 TVS 或在前端增加阻抗匹配。
  • 不要超出 8/20µs 能量规格进行连续浪涌承受,设计中可并联更高能量保护元件(如 TVS 阵列或气体放电管)实现分级防护。
  • 采用推荐的回流焊工艺,按照数据手册的温度曲线进行焊接。

七、封装与订购信息

  • 封装:SOD-523(体积小,适合自动贴装)
  • 品牌:BORN(伯恩半导体)
  • 型号:PESD3V3S1UB-N
    下单时请确认规格(单向、Vrwm=3.3V、Cj、Ppp 等)以匹配设计需求。

如需更详细的典型特性曲线(I-V、钳位曲线、浪涌测试波形)、PCB 参考封装或可靠性数据(如稳态功耗与温度系数),建议参考厂商完整数据手册或咨询供应商技术支持。

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